GAAS FET MICRO-X PACKAGE MARKING Search Results

rogers* RO4003C

Abstract: mgf1941 gaas fet micro-X Package marking 137 marking Micro-X MGF1941AL gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338
Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

gaas fet marking J

Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Contextual Info: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers

UPG2117K

Abstract: UPG2118K J FET RF Cascode Input upg2118
Contextual Info: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3517S03-A

Abstract: NE3517S03-T1C NE3517S03 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3520S03

Abstract: nE352
Contextual Info: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package

siemens spc 2

Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Contextual Info: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are

gaas fet marking A

Contextual Info: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment

Contextual Info: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment

RF3147

Abstract: K3534
Contextual Info: RF3147 TRI-BAND GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Tri-Band GSM Handsets • EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment

EGSM900

Abstract: GSM900 RF3166ASMPCBA-410 RF3166PCBA-410
Contextual Info: RF3166 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • GSM850/EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 • Portable Battery-Powered Equipment

RF2418

Abstract: SOIC-14
Contextual Info: RF2418 LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • 433MHz and 915MHz ISM Band Receivers • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion

DCS Basic Notes

Abstract: DCS1800 EGSM900 GSM900 PCS1900 RF5146 RF5146PCBA-41X
Contextual Info: RF5146 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • GSM850/EGSM900/DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 12 Compatible • Portable Battery-Powered Equipment

SPICE model for UC3844

Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Contextual Info: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a

Contextual Info: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • Quad-Band GSM/EDGE Handsets • GSM850/EGSM900/DCS/PCS Products • GSM/EDGE Transmitter Line-ups • GPRS Class 12 Compatible Products

Contextual Info: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1-3.0 GHz • Low insertion loss: 0.4 dB @ 1 GHz • High isolation: 25 dB @ 1 GHz • High P0.1dB: +37 dBm @ 3.3 V

201097E

Contextual Info: DATA SHEET SKY13320-374LF: 0.1-6.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1 to 6.0 GHz • Low insertion loss: 0.5 dB @ 2.4 GHz • High isolation: 28 dB @ 0.9 GHz • High P0.1dB: +33 dBm @ 3.0 V

201096D

Abstract: SKY13319-374LF 374LF MLPD 6 PIN PACKAGE
Contextual Info: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications • Two-way radios • WiMAX • WLANs Features • Broadband frequency range: 0.1-3.0 GHz • Low insertion loss: 0.4 dB @ 1 GHz • High isolation: 25 dB @ 1 GHz • High P0.1dB: +37 dBm @ 3.3 V

S1545

Abstract: S1534 SKY13320-374LF
Contextual Info: DATA SHEET SKY13320-374LF: 0.1-6.0 GHz GaAs SPDT Switch Applications J2 J1 x Two-way radios x WiMAX x WLANs Features x Broadband frequency range: 0.1-6.0 GHz x Low insertion loss: 0.5 dB @ 2.4 GHz x High isolation: 25 dB @ 1 GHz x High P0.1dB: +33 dBm @ 3.0 V

SKY13319-374LF

Abstract: S1534 S1545
Contextual Info: DATA SHEET SKY13319-374LF: 0.1-3.0 GHz GaAs SPDT Switch Applications J2 J1 x Two-way radios x WiMAX x WLANs Features x Broadband frequency range: 0.1-3.0 GHz x Low insertion loss: 0.4 dB @ 1 GHz x High isolation: 25 dB @ 1 GHz x High P0.1dB: +37 dBm @ 3.3 V

MLPD 6 PIN PACKAGE

Abstract: SKY13350
Contextual Info: DATA SHEET SKY13350-385LF: 0.01-6.0 GHz GaAs SPDT Switch Applications • WLAN 802.11 a/b/g networks • WLAN repeaters • ISM band radios • Low power transmit receive systems Features • Positive voltage control 0/1.8 V to 0/5.0 V • Broadband frequency range: 0.01 to 6.0 GHz

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Contextual Info: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and