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    GAAS FET AMPLIFIER 3400 MHZ Search Results

    GAAS FET AMPLIFIER 3400 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TA75W01FU
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 Datasheet
    TC75S102F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Datasheet
    TC75S67TU
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F Datasheet
    TC75S51F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 Datasheet
    TC75S54F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 Datasheet

    GAAS FET AMPLIFIER 3400 MHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RF 79

    Abstract: GAAS FET AMPLIFIER 3400 Mhz
    Contextual Info: Model SM3436-47 3400-3600 MHz 50 Watt Linear Power Amplifier FOR FIXED WIRELESS APPLICATIONS The SM3436-47 is a 3.4 to 3.6 GHz solid state GaAs FET amplifier designed for the 3.5 GHz Fixed Broadcast Wireless market. The amplifier provides 56 dB of linear gain


    Original     		SM3436-47 SM3436-47 RF 79 GAAS FET AMPLIFIER 3400 Mhz PDF

    OFDM

    Contextual Info: Model SM3134-47L 3100-3400 MHz 50 Watt Ultra Linear Power Amplifier FOR BROADBAND WIRELESS ACCESS The SM3134-47L is a 3.1 to 3.4 GHz solid state GaAs FET amplifier designed for the Broadband Wireless Access market. The amplifier provides 56 dB of linear gain and


    Original     		SM3134-47L SM3134-47L OFDM PDF

    rf power detector TDD

    Abstract: SM3437-43L SM3437-43 SM343 GAAS FET AMPLIFIER 3400 Mhz
    Contextual Info: Model SM3437-43L 3400-3700 MHz 20 Watt Linear Power Amplifier FOR BWA APPLICATIONS The SM3437-43L is a 3.4 to 3.7 GHz solid state GaAs FET amplifier designed for Broadband Wireless Access markets.Our proprietary pre-distortion technique improves the OIP3 by almost 9 dB. The unit


    Original     		SM3437-43L SM3437-43L 12VDC rf power detector TDD SM3437-43 SM343 GAAS FET AMPLIFIER 3400 Mhz PDF

    Contextual Info: Model SM3437-43 3400-3700 MHz 20 Watt Linear Power Amplifier FOR WLL APPLICATIONS The SM3437-43 is a 3.4 to 3.7 GHz solid state GaAs FET amplifier designed for the Wireless Local Loop markets. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit provides ultra-linear


    Original     		SM3437-43 SM3437-43 12VDC PDF

    SM3436-47L

    Abstract: rf detector diode GAAS FET AMPLIFIER 3400 Mhz transistor amplifier 3 ghz 10 watts RF power amplifier MHz
    Contextual Info: Model SM3436-47L 3400-3600 MHz 50 Watt Ultra Linear Power Amplifier FOR BROADBAND WIRELESS ACCESS The SM3436-47L is a 3.4 to 3.6 GHz solid state GaAs FET amplifier designed for the 3.5 GHz Broadband Wireless Access market. The amplifier provides 56 dB of linear gain and +47 dBm of output power at


    Original     		SM3436-47L SM3436-47L rf detector diode GAAS FET AMPLIFIER 3400 Mhz transistor amplifier 3 ghz 10 watts RF power amplifier MHz PDF

    Contextual Info: FLL1200IU-3 - L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.


    OCR Scan     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 PDF

    2500 watt amplifier

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 12-R0 2500 watt amplifier PDF

    FLL1500IU-2C

    Abstract: imt 901 L-band 500 watt amplifier FLL1500
    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C 12-R0 imt 901 L-band 500 watt amplifier FLL1500 PDF

    FLL800IQ-2C

    Abstract: L-band 500 watt amplifier FET AMPLIFIER f 10Mhz to 2 GHz push-pull
    Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C L-band 500 watt amplifier FET AMPLIFIER f 10Mhz to 2 GHz push-pull PDF

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier FLL1200IU-3
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier PDF

    FLL1500IU-2C

    Abstract: fujitsu l-band power fets FLL1500
    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C fujitsu l-band power fets FLL1500 PDF

    FLL1500IU-2C

    Abstract: imt 901 FLL1500
    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C imt 901 FLL1500 PDF

    FLL120

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 FCSI0299M200 FLL120 PDF

    FLL1200IU-3

    Abstract: fll120
    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 Powe4888 fll120 PDF

    FLL800IQ-2C

    Abstract: fll800
    Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C fll800 PDF

    FLL800IQ-2C

    Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C FCSI1199M200 PDF

    FLL800IQ-2C

    Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C FCSI1199M200 PDF

    FLL1200IU-3

    Contextual Info: FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-3 FLL1200IU-3 Powe4888 PDF

    601 121

    Abstract: FLL800IQ-2C
    Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C 601 121 PDF

    FLL1500IU-2C

    Abstract: eudyna GaAs FET Amplifier
    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier PDF

    FLL1500IU-2C

    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C FCSI1199M200 PDF

    12R05

    Abstract: imt 901 FLL1500IU-2C
    Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C FCSI1199M200 12R05 imt 901 PDF

    FLL300IP-4

    Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
    Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band PDF

    FLL300IP-4

    Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 PDF