FLL800 Search Results

FLL800 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLL800IQ-2C		Eudyna Devices	L-band High Power Gaas Fet	Original	PDF	192.19KB	4
FLL800IQ-2C		Fujitsu	FET, P Channel, ID 15 A	Original	PDF	121.84KB	4

FLL800 Price and Stock

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SUMITOMO ELECTRIC Device Innovations Inc FLL800IQ-2C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLL800IQ-2C		12			1 $134.41 10 $114.25 100 $114.25 1000 $114.25 10000 $114.25	Buy Now
FUJITSU Limited FLL800IK2D Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FLL800IK2D		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLL800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLL800IQ-2C Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	FLL800IQ-2C FLL800IQ-2C FCSI1199M200	PDF
FLL800IQ-2C Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	FLL800IQ-2C FLL800IQ-2C FCSI1199M200	PDF
FLL800IQ-2C Abstract: L-band 500 watt amplifier FET AMPLIFIER f 10Mhz to 2 GHz push-pull Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	FLL800IQ-2C FLL800IQ-2C L-band 500 watt amplifier FET AMPLIFIER f 10Mhz to 2 GHz push-pull	PDF
601 121 Abstract: FLL800IQ-2C Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	FLL800IQ-2C FLL800IQ-2C 601 121	PDF
FLL800IQ-2C Abstract: fll800 Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that	Original	FLL800IQ-2C FLL800IQ-2C fll800	PDF
FUJITSU MICROWAVE TRANSISTOR Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power Contextual Info: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band	Original	IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power	PDF