GAAS FET 15A Search Results

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 38V 6472 6 . 4 ~ 7.2GHz BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an internally im pedan ce-m atched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 G H z band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz

Contextual Info: TOSHIBA TIM4450-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 4.4 GHz to 5.0 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - Pi(jB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - GldB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G 1dB= 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS 8820-A S Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - — 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n LOW INTERMODULATION DISTORTION n IM3=-45dBc TYP. at Po=36.5dBm Single Carrier n HIGH GAIN G1dB=8.5dB(TYP.) at 5.9GHz to 6.4GHz Level n BROAD BAND INTERNALLY MATCHED

TI 365

Abstract: TIM7179-4SL
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, - Single carrier level • High power - P idB = 36.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - iladd = 33% at 7.1 GHz to 7.9 GHz

TLP251F

Abstract: E67349 TLP251 VDE0884
Contextual Info: TOSHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAMs IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA€As light emitting diode and a integrated photodetector.

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

7 pin Inverter toshiba

Abstract: E67349 TLP251 TLP251F VDE0884
Contextual Info: TO SH IBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAM s IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA€As light emitting diode and a integrated photodetector.

Contextual Info: TO SHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAM s IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA-fAs light em itting diode and a integrated photodetector.

igbt inverter circuit for induction heating

Abstract: TLP251F UL1577 E67349 TLP251 VDE0884
Contextual Info: TLP251F TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP251F Inverter For Air Conditionor Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive Unit in mm The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and a integrated photodetector.