GAAS ABSORPTION Search Results

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

hittite j

Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Contextual Info: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

TSAL6200

Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si

ttl cmos advantages disadvantages

Abstract: Motorola MC74HC4053 signal path designer Microwave Video Systems
Contextual Info: MGS Series Monolithic GaAs Switches Application Note G007 Introduction Monolithic GaAs switches provide a popular alternative to PIN diode or mechanical switches. They offer comparable performance, with the added advantages of smaller size and lower cost. Four

NE70083

Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

NE70083

Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

Contextual Info: TSML3710 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power

Contextual Info: V3711P Vishay Semiconductors GaAs Infrared Emitting Diode in SMT Package Description V3711P is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Wide aperture and flat window enables easy design of external optics. Features • High radiant power

TEMT3700

Abstract: TSML3710
Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

TSML3710-GS08

Abstract: TEMT3700 TSML3710 diode 178 tfk tfk Phototransistor
Contextual Info: TSML3710 Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage

TFK 450

Abstract: diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TEMT3700 TSML3710 TSML3710-GS08
Contextual Info: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power

BPW21R

Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

TEMT3700

Abstract: TSML3710
Contextual Info: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: DATA SHEET SKY13321-360LF: 0.1-3.0 GHz GaAs SPDT Switch Applications Description • Higher power applications with excellent linearity performance • WiMAX systems The SKY13321-360LF is a pHEMT GaAs FET I/C switch. The switch may be used in transmit/receive applications by

201098D

Abstract: S1537 s1538 S1540 S1539
Contextual Info: DATA SHEET SKY13322-375LF: 20 MHz-6.0 GHz GaAs SP4T Switch Applications Description • Multiband telecommunications up to 6 GHz The SKY13322-375LF is a GaAs FET I/C single-pole, four-throw SP4T switch. This general purpose switch is an ideal choice for

Contextual Info: DATA SHEET SKY13322-375LF: 20 MHz-6.0 GHz GaAs SP4T Switch Applications Description • Multiband telecommunications up to 6 GHz The SKY13322-375LF is a GaAs FET I/C single-pole, four-throw SP4T switch. This general purpose switch is an ideal choice for

TSHA 5502

Abstract: TSHA5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5503
Contextual Info: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Ir photodiodes

Contextual Info: TSHA520. Vishay Telefunken ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs