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274 transistor Abstract: transistor c 5855 Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and	OCR Scan	ot440a ptb23006u erie1250-003 ga244 +2274 transistor transistor c 5855	PDF

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Document Tags

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274 transistor

Abstract: transistor c 5855
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and

OCR Scan

ot440a ptb23006u erie1250-003 ga244 +2

PDF