GA20 Search Results

GA200SA60SP

Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

GA201

Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level

GA200HS60S1PbF

Contextual Info: Bulletin I27305 01/07 GA200HS60S1PbF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses

Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package

Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

ga200sa60up

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)

E78996 datasheet bridge

Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200TS60U

Contextual Info: PD -5.058 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C

Contextual Info: STANDARD POWER INDUCTORS - THRU HOLE GA20 GA20LF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, High Current PART NUMBER L µH @ 1kHz NOM GA20-101K GA20-121K GA20-151K GA20-181K GA20-221K GA20-271K GA20-331K GA20-391K GA20-471K GA20-561K GA20-681K GA20-821K GA20-102K

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028

GA20JT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: GA20JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA20JT06-CAL.

Contextual Info: GA20JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-JUN-2015 $ * * GeneSiC Semiconductor Inc.

GA200HS60S1

Abstract: 30EPH06 tig welding machine
Contextual Info: Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package

single chip dvd player

Abstract: dual photodiode ECG circuit diagram GA202TXV2SZ Dual-wavelength Laser Diode opic opic DVD
Contextual Info: Under development New product GA202TXV2SZ OPIC Light Detector *OPIC Light Detector for Dual-wavelength Laser Diode Features 0.48 7 (1.0) (2.0) Y 12 11 10 9 8 (Unit:mm) 2.9 X' 3 φ2.0 X 7 0.3 0.25 1.5 ( 1 ) Suitable for Dual-wavelength laser diode ( 2 ) Compact and thin package

e789

Abstract: ic 3020
Contextual Info: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

GA200SA60UP

Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

light DETECTOR CIRCUIT DIAGRAM

Abstract: 4VE11 opic OPIC Light Detector GA200T8R1SZ CD-ROM diagram
Contextual Info: Under development New product GA200T8R1SZ OPIC Light Detector *OPIC Light Detector for 12x Speed Writing CD-R/RW Features Outline Dimensions 12 11 10 9 8 7 2.2 0.35 0.3 Detector Center 4.0 8.4 2.0 ( 1 ) Compact and thin package (Package dimensions : 5.0 × 4.0 × 1.5mm)

GA200HS60S1

Abstract: tig welding machine 30EPH06
Contextual Info: Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses