GA1A Search Results

MT460

Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Contextual Info: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E

ITE 8511

Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë

GA1A1S201WP

Contextual Info: Technical Document Optoelectronics Specification EC/Opto Group GA1A1S201WP OPIC Light Detector Product Specification October 2006 Linear output Light Detector with a dynamic range of 3 to 55,000 lx and extended operating temperature. Technical Document Opto Specification

GA1A2S100SS

Abstract: GA1A2S100LY ICC-325 D1-A00501EN home automation CIRCUIT DIAGRAM "Ultrasonic Sensor" for medical
Contextual Info: GA1A2S100SS/GA1A2S100LY GA1A2S100SS/ GA1A2S100LY OPIC Linear Output Ambient Light Sensor • Features ■ Agency Approvals/Compliance 1. Linear output, suitable for indoor or outdoor use 2. Light sensitivity and response curve similar to that of the human eye

C2016

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N 1A 3Q MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters R ! = 1.0 k fi R2 = 10 k£2 • Complementary to GA1A3Q ABSOLUTE M A X IM U M RATINGS

transistor a4z

Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z

Contextual Info: DATA SHEET MEC / “ “ SILICO N TRANSISTO R / GA1A3Q M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors B u iit-in TYPE in m illim e te rs O— \ R i = I.O k fi R2 = 1 0 k f i EE • C om plem entary to G N 1 A 3 Q

Contextual Info: DATA SHEET NEC SILICO N TRAN SISTO R ELECTRON DEVICE GA1A4P M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR F E A TU R E S PACKAG E D IM E N S IO N S • Resistors Built in TYPE in m i ll i m e t e r s H W R i =10 kn V = 4 7 ktt • C o m plem entary to G N 1A 4P

GA1A1S202WP

Contextual Info: Technical Document Optoelectronics Specification EC/Opto Group GA1A1S202WP OPIC Light Detector Product Specification November 2007 Surface Mount Detector 555 nm with Dynamic Range of 3 to 55,000 lx, extended operating temperature range. REFERENCE REFERENCE

99 948

Contextual Info: GA1A1S200WP Optoelectronic Device FEATURES COMPOSITION AND USAGE • Logarithmic output • This product is not designed for use in environments with high electromagnetic flux or ionized particle irradiation. • Stable over specified temperature range • Compact package 1.6 x 2.0 mm

marking "l34"

Abstract: transistor bt 370
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON OEVICE GA1A4P MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE D IM EN SIO N S • Resistors Built-in TYPE in millimeters R l = 1 0 k£2 R 2 = 4 7 k£2 • Complementary to GN1A4P ABSOLUTE M A X IM U M R ATIN G S

ga1a2s100ss

Abstract: GA1A2S100LY PCB design layout of gas leakage alarm alcohol sensor data sheet linear light sensor home automation CIRCUIT DIAGRAM
Contextual Info: GA1A2S100SS/GA1A2S100LY GA1A2S100SS/ GA1A2S100LY OPIC Linear Output Ambient Light Sensor • Features ■ Agency Approvals/Compliance 1. Linear output, suitable for indoor or outdoor use 2. Light sensitivity and response curve similar to that of the human eye

GA1A1S100WP

Abstract: GA1A1S100 eiaj-c3 ga1a
Contextual Info: ED-07G020 ay 25,2007 H E R E S OPTO-ANALOG DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR OPIC LIGHTDETECTOR MODEL No. GA1A1S100WP Specified for Enclosed please find copies of the Specifications which consists of 17 pages including cover.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE • GIM1A4P _ MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • PACKAGE DIMENSIONS Resistors Built-in TYPE in millimeters Ri = 10 kŒ R2 = 4 7 k£2 • Complementary to GA1A4P

N1A4M

Contextual Info: DATA SHEET NEC SILICON TRANSISTO R ELECTRON DEVICE GA1A4M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in millimeters O -A A A r R i = 1 0 kS > R2 = 10 k fl • C om plem entary to G N 1A 4M

L6820

Abstract: transistor 3BU
Contextual Info: DATA SHEET NEC / ElfCTRONDEVICE _ / SILICO N TRAN SISTO R / GA1A4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FE A TU R E S PACKAGE DIMENSIONS • Resistor B u ilt-in TYPE in millimeters I. • R t = 10 kf2 C om ptem entary to G N 1 A 4 Z

ga220t2

Abstract: PC357NJ0000F
Contextual Info: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Package type Mini-flat 4-pin Compact, SMT type Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. Low input current

ga1a2s100ss

Abstract: smd rgb led 6pin IR2E51Y7 IR2E53Y7 GA1A2S100LY GA1A1S201WP SHARP 357 GM5BW96370A GM5BW01300A GW5BNC15L02
Contextual Info: Selector Guide Electronic Components Group Lighting • High Luminosity LEDs • LED Modules • LED Drivers • Ambient Light Sensors Pack performance into the smallest dimensions with Sharp’s solutions for Lighting, Sensing, and Power handling. Sharp’s Lighting, Drivers, Power handling,

GE SCR Manual

Abstract: GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V
Contextual Info: SCR Medium & High Current Modules NOMENCLATURE CIO 12BA1AD1 is a 200V, fu ll wave back to back bridge connected CIO c e lls on type 12 F ins, capable o f c o n t r o llin g 4.7 amp average per SCR in free a ir o r 6.2 amp average per ce ll with 1000 lin e a r feet per minute forced a ir.

RT1N241M

Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Contextual Info: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F

transistor cross reference

Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Contextual Info: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual

PC1231xNSZ0F

Abstract: PC3HU7 PC 870 SHARP opto coupler GP2Y0A41SK0F GP2A222HCKA GP1S195HCPSF Sharp IS471FE GP1UX31QS pc3sh13 gp1a047rbzlf
Contextual Info: ✱❆▲❊❄❆_✲.❃ook ✷❂❈❆ ✩✪ ✾❆❅n❆•❅❂❖, J❑l❖ ✤✫, ✥✣✣✪ ✤:✣✦ ✷M OPTO PHOTOCOUPLER INDEX TREE ■ Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

4k2k

Abstract: LR36B15 LS044Q7DH01 LK800D3LA48 LS013B7DH03 A96 520k
Contextual Info: http://sharp-world.com/products/device-china/ March 2015 2015-03 目 录 TFT LCD 2 LCD模块. 2 Imaging LSI Imaging REG 封装 27 CSP （芯片尺寸封装）. 27