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    G34N100E2 Price and Stock

    Harris Semiconductor

    Harris Semiconductor HGTG34N100E2

    Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG34N100E2 1,350 1
    • 1 -
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    • 100 $7.06
    • 1000 $6.32
    • 10000 $5.94
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    G34N100E2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BVces

    Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
    Contextual Info: G34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss


    Original     		hgtg34n100e2o-247710ns150oc+5bvcesdiagram inductionan7254an7260g34n100e2 PDF

    G34N100E2

    Abstract: AN7254 AN7260 HGTG34N100E2
    Contextual Info: G34N100E2 S E M I C O N D U C T O R 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		hgtg34n100e2o-247710ns150oc+3g34n100e2an7254an7260 PDF