G32N60B Search Results
G32N60B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
32N60B
Abstract: 32n60 32N60BD1 D25VF IXGH32N60B
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32N60B 32N60BD1 O-247 O-268 32N60B 32n60 32N60BD1 D25VF IXGH32N60B | |
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Contextual Info: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms |
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32N60BU1 O-247 IXGH32N60BU1 728B1 | |
IXGH32N60BU1
Abstract: 32N60BU1 G32N60B 32N60B IXGH32N60
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Original |
32N60BU1 IXGH32N60BU1 728B1 IXGH32N60BU1 32N60BU1 G32N60B 32N60B IXGH32N60 | |
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Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
Original |
32N60B 32N60BD1 O-247 O-268 | |
IXGH32N60BU1Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient |
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IXGH32N60BU1 O-247 IXGH32N60BU1 | |
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Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
Original |
32N60B 32N60BD1 O-247 O-268 | |
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Contextual Info: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient |
Original |
IXGH32N60BU1 O-247 |