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    G11Z Search Results

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    Fischer Elektronik GmbH & Co KG BLM-KG-1-1-Z

    suitable for male header SLM and
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    DigiKey BLM-KG-1-1-Z Bulk 1,000 10
    • 1 -
    • 10 $0.14
    • 100 $0.14
    • 1000 $0.14
    • 10000 $0.14
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    PEPPERL+FUCHS GmbH VBA-4E4A-G11-ZAJ-EA2L-F

    AS INTERFACE SEN/ACT MODULE
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    DigiKey VBA-4E4A-G11-ZAJ-EA2L-F Box 2 1
    • 1 $481.03
    • 10 $417.61
    • 100 $394.40
    • 1000 $394.40
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    MIL SPEC CONNECT D38999-21NG11ZA

    Series iii Recep Tripple Start
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    DigiKey D38999-21NG11ZA Bulk 1
    • 1 $6054.75
    • 10 $4417.58
    • 100 $2399.33
    • 1000 $2399.33
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    MIL SPEC CONNECT D38999-43YG11ZD

    Series iv Recep Breach-Lok
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    DigiKey D38999-43YG11ZD Bulk 1
    • 1 $7472.33
    • 10 $5451.83
    • 100 $2961.07
    • 1000 $2961.07
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    MIL SPEC CONNECT D38999-45NG11ZA

    Series iv Recep Breach-Lok
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    DigiKey D38999-45NG11ZA Bulk 1
    • 1 $7093.50
    • 10 $5175.43
    • 100 $2810.93
    • 1000 $2810.93
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    G11Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t PDF

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing PDF

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A PDF