G004 Search Results

BGA312

Abstract: Q62702-G0042 mmic-amplifier BMS 13-58 Type 01
Contextual Info: BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 11 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.0 GHz l Plastic Package -1dB Type Marking BGA312 BMs Ordering Code 8-mm taped Q62702-G0042

Transistor BFT 44

Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Contextual Info: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the

bfa53

Abstract: Philips ECG 978 ECG978
Contextual Info: PHILIPS E C G INC 17E D • bbSBTSÖ G00447S ’ ECG Semiconductors ECG978 DUAL TIMING CIRCUIT 14 13 12 I I FEATURES: • • 10 9 8 f .280" 7.ll TIMING FROM MICROSECONDS THROUGH HOURS OPERATES IN BOTH ASTABLE AND M ONO­ STABLE MOOES • ADJUSTABLE DUTY CYCLE

silicon carbide LED

Abstract: silicon carbide LDB5410
Contextual Info: SIEMENS CMPNTSi OPTO S5E D • aB3b32b G004GtiE SIEM EN S 3 ■ LDB5410 BLUE T13/4 LED LAMP T - 4 { - 3LS" Preliminary Data Sheet FEATURES Maximum Ratings • Pure Blue Light 480 nm Reverse voltage Forward current Storage temperature range Junction temperature

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D 7HbbflSl G004334 410 •IflTY Generic Optoisolator Specifications _ GFH601 Optoisolator G aAs Solid-State Lamp and NPN Silicon Phototransistor T h e GFH601 consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a silicon p h o to tra n sisto r in a

loub

Contextual Info: VTR ffl IC /IC s for VTR Applications ROHM CO LT» 4DE » B Ä 7611N 7050^ W BA7611N G004ÖÖ3 3 E3RHM ~T-77-2i Video Signal Switcher • ii-ffi^/ÉlSl/Dimensions Unit : mm BA7611N (£, TV, VTR & ¿f X - Ì7 ? ICTto 3 Ä * — 1 b tz t 'x QdST^-J, ' » 7 ? 7 > 7 0 !& £ l* 3 i b T l.'* T o

BGA310

Abstract: Q62702-G0041
Contextual Info: BGA310 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 9 dB typical Gain at 1.0 GHz l 9 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 2.4 GHz l Plastic Package -1dB Type Marking BGA310 BLs Ordering Code 8-mm taped Q62702-G0041

BGA318

Abstract: Q62702-G0043
Contextual Info: BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data l Cascadable 50 Ω-Gain Block l 16 dB typical Gain at 1.0 GHz l 12 dBm typical P at 1.0 GHz l 3 dB-Bandwidth: DC to 1.2 GHz l Plastic Package -1dB Type Marking BGA318 BNs Ordering Code 8-mm taped Q62702-G0043

S parameters for ATF 10136

Abstract: ATF-10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555
Contextual Info: S-Band Low Noise Amplifier Using the ATF-10136 Application Note G004 ΓO Introduction This application note documents the results of using the ATF-10136 in low noise amplifier applications at S band. The ATF-10136 device is capable of a 0.5 dB noise figure at 2.3 GHz. The ATF-10136 is packaged

NF 841

Abstract: BGA312 Q62702-G0042 IS21K 2400 siemens
Contextual Info: SIE M E N S BGA312 Silicon Bipolar MMIC-Amplifier Preliminary Data Cascadable 50 i2-Gain Block 11 dB typical Gain at 1.0 GHz 9 dBm typical at 1.0 GHz 3 dB-Bandwidth: DC to 2.0 GHz Plastic Package T ype M arking BGA312 BMs O rde rin g c o d e 8-mm taped Q62702-G0042

ECG1185

Abstract: ECG118
Contextual Info: PHILIPS EC G INC Q 17E m bbS3i2fl G004fci3Li S T-74 -Û 5 -0 1 ECG Se m ico n d u cto rs ECG1185 AF Power Amplifier H— .985 25.0 . -532" ECG1185 Is a linear integrated circuit used as an A F power amplifier of 3.5 W. It is pack­ aged in a single in-line package with a heat

G004

Abstract: ipc-sm-786A MIL-STD-81075 MIL-D-3464 IPC-4202 JESD22-A113 GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE IPC-SM-786 research and development procedure in electronics industry P-21373
Contextual Info: MOISTURE CONTROL MEASURES for Epoxy Encapsulated Surface Mount Magnetic Components Extending Pulse’s Commitment to a Quality Partnership 1996, Pulse Engineering, Inc. G004 EXECUTIVE SUMMARY The Situation Over the past decade, the transition from through-hole to SMT production techniques has revealed quality

Contextual Info: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

Contextual Info: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance

M0139-01

Abstract: M0137-02 P0093-01
Contextual Info: CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

circuit diagram voltage regulator 6 volt

Contextual Info: TPS54061-Q1 www.ti.com SLVSBM7 – MARCH 2013 Wide-Input, 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ Check for Samples: TPS54061-Q1 FEATURES DESCRIPTION • • The TPS54061-Q1 device is a 60-V, 200-mA, synchronous step-down dc-dc converter with

Contextual Info: ADS8028 www.ti.com SBAS549B – MAY 2011 – REVISED MARCH 2012 12-Bit, 1-MSPS, 8-Channel, SAR ADC with Internal Reference and Internal Temperature Sensor Check for Samples: ADS8028 FEATURES DESCRIPTION • The ADS8028 is a 12-bit analog-to-digital converter

Contextual Info: ISO7420 ISO7420M ISO7421 www.ti.com SLLS984H – JUNE 2009 – REVISED MAY 2013 Low-Power Dual Digital Isolators Check for Samples: ISO7420, ISO7420M, ISO7421 FEATURES APPLICATIONS • • • 1 2 • • • • • • • • Highest Signaling Rate: 1 Mbps

subwoofer inductor filter

Contextual Info: TM TAS5186A www.ti.com SLES156 – OCTOBER 2005 6-Channel, 210-W, Digital-Amplifier Power Stage • • • • • • • • Total Output Power @ 10% THD+N – 5x30 W @ 6 Ω + 1×60 W @ 3 Ω 105-dB SNR A-Weighted 0.07% THD+N @ 1 W Power Stage Efficiency > 90% Into

Contextual Info: TRF1115 www.ti.com SLWS174A – APRIL 2005 – REVISED APRIL 2006 2.5-GHz, High Dynamic Range, Low-Noise Down-Converter FEATURES • • • • • • 20 19 18 17 16 RFAGC MXRPB TRF1115 TOP VIEW MXRI • DEVICE INFORMATION GND • • Performs First Down-Conversion in MMDS /

AT82

Contextual Info: BurrĆBrown Products from Texas Instruments PCM1608 SBAS164B – DECEMBER 2000 – REVISED JULY 2005 24-Bit, 192-kHz Sampling, 8-Channel, Enhanced Multilevel, Delta-Sigma Digital-to-Analog Converter FEATURES • • • • • • • • 24-Bit Resolution

Contextual Info: BurrĆBrown Products from Texas Instruments PCM3002 PCM3003 SBAS079A – OCTOBER 2000 – REVISED OCTOBER 2004 16/20-BIT SINGLE-ENDED ANALOG INPUT/OUTPUT STEREO AUDIO CODECS FEATURES • • • • • • • • • Monolithic 20-Bit ∆Σ ADC and DAC 16/20-Bit Input/Output Data

Contextual Info: BurrĆBrown Products from Texas Instruments PCM1800 SBAS071A – OCTOBER 2000 – REVISED OCTOBER 2004 SINGLE-ENDED ANALOG-INPUT 20-BIT STEREO ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Dual 20-Bit Monolithic ∆Σ ADC

Contextual Info: TAS5121I www.ti.com SLES122 – SEPTEMBER 2004 TM DIGITAL AMPLIFIER POWER STAGE FEATURES • 100-W RMS Power BTL Into 4 Ω With Less Than 10% THD+N 80-W RMS Power (BTL) Into 4 Ω With Less Than 0.2% THD+N 0.09% THD+N at 1 W Into 4 Ω Power Stage Efficiency Greater Than 90% Into