G0010 Search Results

UBX-G6010

Abstract: UBX-G6000-BA UBXG6010
Contextual Info: u-blox 6 single chips and chipsets GPS UBX-G6010, UBX-G6000/G0010 Product description The UBX-G6010 and UBX-G6000/UBX-G0010 are the newest generation single chip and chipset GPS receivers from u-blox that demonstrate our continuing commitment to advancing

VTB5051

Abstract: 3500/04 B5050 VTB5050
Contextual Info: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.

ubx-g5010

Abstract: UBX-G5000-BT UBX-G5000 IC 7447 PIN CONNECTION DIAGRAM 7447 pin configuration ic 7447 pin configuration UBX-G0010-QT IC 7447 PIN CONFIGURATION FIGURE 32 pin 5 x 5 mlf UBLOX
Contextual Info: UBX-G5010, UBX-G5000/UBX-G0010 u-blox 5 Single Chips and Chipsets for GPS and GALILEO Preliminary Data Overview your position is our focus The UBX-G5010 and UBX-G5000/UBX-G0010 are the single chip and chipset versions of the high performance u-blox 5 positioning

asx340

Abstract: je 243 PLK3210 109-149 IQX160 JE 33 IQX128B IQX240B IQX320 se 336
Contextual Info: Introduction T his m anual provides the inform ation needed to configure th e IQ X Fam ily devices using the JT A G interface. It is in ten d ed fo r u sers w ho p lan to w rite th eir ow n code to configure the IQ X devices. In addition, this m anual explains

chn 442

Abstract: chn 437 chn 439 chn 436 lz smd marking
Contextual Info: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)

QLCC-16

Abstract: transistor hh 004 RF2115L SSOP-16 SSOP-28 TQFP-48 840MHz transistor PCB 043 005-0 023 JC41-00
Contextual Info: MICRO-DEVICES HIGH POWER UHF AMPLIFIER Typical A pplications • Analog Com m unication System s • 4 0 0 M H z Industrial Radios • Analog C ellular System s A M P S & TACS • Driver S ta g e for H igher Power Applications • 9 0 0 M H z S pread Spectrum System s

Contextual Info: IBM025160 IBM025161 IBM025170 IBM025171 2 5 6 K X 16 M U L T IP O R T V ID E O R A M Features • 50 MHz EDO performance • 256K x 16 Multiport Video RAM • FLASH WRITE with WPBM- 512 x 16 bits • Performance: -6H -60 -70 RE Precharge 25ns 25ns 30ns 'SCA

Contextual Info: NN51V17800B Fast Page Mode CMOS 2M x 8bit Dynamic RAM NPN a DESCRIPTION The NN51V17800A series is a high performance C M OS Dynamic Random Access Memory organized as 2,097,152 words by 8 bits. The NN51V17800B series is fabricated with advanced C M O S technology and designed with innovative de­

Contextual Info: OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • • • Two Isolated MOSFETs In A Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power

iwaki resistor

Abstract: 2kw pfc power supply 150w 24v THERMAL Fuse RESISTOR iwaki FDK Stepper Motors transformer less power supply 6v output iwaki PFCM300-03 switching power supply transformer construction 12v dc to pc Power Supply
Contextual Info: FD K FDK production framework Features • Global operation FDK produces switching power supplies not only in Japan but also in Taiwan and China. ■ High-power-factor technology FDK is a leading creator of technologies for high-power-factor switching power supplies, power-factor-correc­

Contextual Info: W741C250 ^LW inbond n v Electronics Corp. vh 4-BIT MICROCONTROLLER G E N E R A L D E S C R IP T IO N The W741C250 is a high-performance 4-bit microcontroller jxC that provides an LCD driver. The device contains a 4-bit ALU, two 8-bit timers, a divider, a 24 x 4 LCD driver, and five 4-bit I/O ports

Contextual Info: Paradigm' PDM4M4120 1M x 32 CMOS Static RAM Module Features □ High-density 4 megabyte Static RAM m odule □ Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) □ Fast access time: 20 ns (max.) □ Surface mounted plastic components on an epoxy

IDT7164

Contextual Info: LOGIC DEVICES INC 8K X 8 Static RAM 2bE D Low Power FEATURES □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum Q Low Power Operation Active: 320 mW (L7C185) typical at 35 ns

honeywell memory sram

Abstract: 419B3E
Contextual Info: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec

.5555b

Abstract: 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array
Contextual Info: A Hi” h IVrfnrm am r ¿ 5 6 k x 8 / I Z 8 K x 16 SV C M O S I la sh HB K IP R O M ASZ9I-200 Z ^ K x X / I 2 8 K x 1 6 C M O S ¡'l a s h I I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture - O ne 16K; tw o 8K; on e 32K; and three 64K byte sectors

Contextual Info: MICRON TECHNOLOGY INC b i l l 5 4e! 0QG1031 7 14E » . W^jjgg T-¿/6-Z3 -/ 7 256K X 36 DRAM DRAM MODULE FEATURES PIN ASSIGNMENT Top View • Industry standard pin-out in a 72-pin single-in-line package • High performance CMOS silicon gate process. • Single 5V±10% power supply