G 13003 Search Results

transistor LB 13003 C

Abstract: t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR
Contextual Info: S G S -T H O M S O N E fi M lF3m i g ? [ M 0igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

Contextual Info: V^L S I TECHNOLOGY INC bDE V L S I T e c h n o lo g y in c. D • T3flfl347 000R5S3 flSfl * V T I -t~ is -p VP15323TSPP TRIPLE SONET STS PAYLOAD PROCESSOR DESIGNER'S GUIDE August 1992 V L S I TECHNOLOGY INC bDE ]> ■ ^360347 G G G C] 2 2 4 7=14 ■ VTI Ü P V L S I T e c h n o l o g y , in c .

PC 13003 TRANSISTOR

Abstract: electronic ballast 13003 KSB13003HR NPN power transistor 15A amperes 13003 TO 92 PACKAGE 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn g 13003 PC 13003 TRANSISTOR application hr/13003 TRANSISTOR npn
Contextual Info: KSB130 003HR KSB13003HR ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003HR KSB13003HR High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL

H13003

Abstract: H 13003 PC 13003 TRANSISTOR TRANSISTOR 13003 transistor 11 ksb130 13003 TRANSISTOR PC 13003 TRANSISTOR application
Contextual Info: KSB130 003H KSB13003H ◎ SEMIHOW REV.A0,Oct 2007 KSB130 003H KSB13003H High g Voltage g Switch Mode Application pp • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING

pc 13003

Abstract: 13003 TO 92 PACKAGE KSB13003A
Contextual Info: KSB130 003A KSB13003A ◎ SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High g Voltage g Switch Mode Application pp • High Speed Switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

cai3

Contextual Info: •'IP radiali! TECHNICAL DATA SHEET Fibre Optic Components T itle F 715 051 000 STAN D A RD S I N G L I EMODE P L U G H O U S IN G F O R A ' F T Z 1 CAI3 L E <t>3.5mm D im e n s io n s S e rie s EC Page 1/1 56 MAXI* 8.20 MAXI mm Issu e : 04 1 9 96 x < s * Dimension Indicated

IEC 874-1 method 6 for fibre optic

Contextual Info: r a d ia li : Fibre Optic Components F 715 059 000 TECHNICAL DATA SHEET Title S T A N D A R D S I N G L E M O D E P LU G H O U S I N G for a co ated fibe r D IA 250 -m with a tube DIA 0 .5 / 1. 1 or 0. 6/1 mm D i m e n s io ns mm S eri es EC Issue : 04 19 96

IEC 874-1

Contextual Info: f a RADIALi! llP fc itm lH TECHNICAL DATA SHEET F ib r e O p tic Components T itle F 715 010 703 STAN D A RD S I N G L EMODE P L U G H O U S IN G + O P T I C A L F E R R J L E D I A 1 2 5 + [a m D im e n s io n s mm S e rie s EC Page 1/1 56 MAXI* 8.20 MAXI

Contextual Info: f a RADIALi! llP fc itm lH TECHNICAL DATA SHEET F ib r e O p tic Components F 715 010 706 T itle STAN D A RD S I N G L EMODE P L U G H O U S IN G + O P T I C A L F E R R J L E D I A 1 2 6 [a m 8.20 MAXI mm D im e n s io n s S e rie s Issu e : EC 06 1 3 96

SD13003

Contextual Info: EN G IN EER IN G NO. 130039 "sj 00 9 10 M A T E R IA L NO. D ESC RIPTIO N 1300390385 DND150 F E M A L E S T A N D A R D T E R M IN A T O R WITH R E S IS T O R 1 300390386 DND151 F E M A L E T E R M IN A T O R WITH JU M PE RS NO TES: 1. M A T E R IA L : S E E T A B L E

Contextual Info: 13 12 MATERIAL NUMBER 11 10 9 8 7 6 5 4 3 2 1 OLD PART NUMBER J J I I H H G G F F E E D D C C COMPONENT MATERIAL FINISH GENERAL TOLERANCES UNLESS SPECIFIED =0 DESCRIPTION B ITEM C =0 INCH mm 4 PLACES 3 PLACES 2 PLACES 1 PLACE -0.13 0.25 -.005 .010 .020

TU F 13003

Abstract: S13003 s13002 transistors 13003 SI 13003 13003 TO-126 13003T 13003 TO 126 S13003T transistors SG 13003
Contextual Info: 7^537 005^153 3 • SGS-THOMSON IILIOT «! S G S-TH0MS0N SGS13002/13003 SGS13002T/13003T 3DE » HIGH VOLTAGE SWITCHING APPLICATIONS DESC RIPTIO N The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

13003T

Abstract: SI 13003 SH 13003 B834 TR 13003 A 13003ts 13003 TO 126 transistors 13003 SGS13003 g 13003
Contextual Info: 7 ^ 5 3 7 005^153 SGS-THOMSON IILIOT «! S G S-TH0MS0N 3 • SGS13002/13003 SGS13002T/13003T 3D E » HIGH VOLTAGE SWITCHING APPLICATIONS DESC RIPTIO N The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

full subtractor circuit using nand gates

Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5
Contextual Info: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable

vl86c020

Contextual Info: V L S I TECHNOLOGY INC 1ÔE D • 1300347 0005016 T ■ Ji'i«-Í7-Í2. VLSI T ech n o lo g y , in c . VL86C020 32-BIT RISC MICROPROCESSOR WITH CACHE MEMORY FEATURES DESCRIPTION • On-chip 4 Kbyte 1K x 32 bits cache memory The VL86C020 Acorn RISC Machine

transistor 13003 AD

Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
Contextual Info: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

full subtractor circuit using xor and nand gates

Abstract: vhdl code for multiplexer 64 to 1 using 8 to 1 8 BIT ALU design with vhdl code using structural ALU 74181 verilog verilog code for 64 bit barrel shifter full subtractor implementation using 4*1 multiplexer 4 BIT ALU design with vhdl code using structural 32 bit ALU vhdl code full subtractor using NOR gate for circuit diagram alu 74181 pin diagram
Contextual Info: V L S I T E C H N O L O G Y INC 47E D MÊ 1 3 0 0 3 4 7 VLSI T ech n o lo g y , in c. 000ñ7ñb 7 • VTI t . ¥ 2 ,v / VDP370 SERIES 1-MICRON DATAPATH COMPILER LIBRARY FEATURES • Compiles to an optimized layout for cell-based designs or to a portable netlist for gate array or standard cell

84 pin plcc ic base

Abstract: VL86C010 D1562
Contextual Info: L S I TECHNOLOGY INC Tfi BE§ =1300347 O D O ltH ft M VLSI Tech n o lo g y , in c . T -7 5 -37-07 VL86C010 32-BIT RISC MICROPROCESSOR FEATURES DESCRIPTION • 32-bit internal architecture The V L86C 010 Acorn R IS C Machine ARM is a full 32-bit general-purpose

HDB3 schematic

Abstract: VL80C75-PC
Contextual Info: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho

VT20C

Contextual Info: V L S I TECHNOLOGY INC 1ÖE D =130034? DD03Q42 □ • T - M - 8 3 -6 8 VLSI T ech n o lo g y , in c . VT20C71 • VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized

Contextual Info: TECHNOLOGY INC Tfi *1300347 0 0 0 1 7 3 ^ 7 ^ VLSI T e c h n o l o g y , in c . PRELIMINARY rT : V6:35 VT2KF9 2,064X9 FIFO MEMORY FE A T U R E S DESCRIPTION • FlraMn, flret-out dual-port memory The VT2KF9 Is a flrst-ln, flrst-out FIFO memory that uses a h igh *

X 13003

Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

ICF CP 1005

Abstract: SM 71A diode a4945 13003 application notes 13003 TO 92 PACKAGE X 13003 1N3064 TU F 13003 ISTD-883 pj 1126
Contextual Info: MI L - M - 3 8 5 1 0 / 77A 20 August 1984 SUPERSLffl Tl G MI L - M- 3 8 5 1 0 / 7 7 US AF 18 O c t o b e r 1979 MI L I T A R Y MI CROCI RCUI TS, D I G I T A L , SCHOTTKY T T L MONOLI THI C S I L I C O N This sp e c ific a tio n is me n t s and Agencies