FTZ MARKING CODE Search Results

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

marking FtZ sot363

Abstract: FtZ MARKING
Contextual Info: Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors FEATURES PUMZ1 PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 emitter TR2; TR1 2, 5 base TR2; TR1 3, 6 collector TR2; TR1 • Reduces number of components and boardspace.

marking code IC .ftz

Abstract: SMX-1 BAKOM-92 on automatic door opener system FtZ MARKING CODE 14305 voltage regulator marking agb light sensor siemens KPY 10 Automatic voltage regulator siemens
Contextual Info: SMX-1 SIEMENS Beschreibung Description Das SMX-1 Modul ist ein auf Mikrowel­ lentechnologie basierender Bewegungs­ sensor. Die wesentlichen Bestandteile sind eine mit einem dielektrischen Resonator, einem GaAs Feldeffekttransistor und SiSchottkydioden bestückte Multilayerplatine,

FtZ MARKING CODE

Abstract: NTHD2110TT1G marking code FTZ A5780 64A33
Contextual Info: AND PIN A NTHD2110T Power MOSFET -12 V, -6.4 A, Single P-Channel +TVS, ChipFETt Package Features •ăLow RDS on MOSFET and TVS Diode ChipFET Package •ăIntegrated Drain Side TVS for 15 kV Contact Discharge ESD http://onsemi.com Protection •ă1.8 V Gate Rating

Contextual Info: AND PIN A NTHD2110T Power MOSFET -12 V, -6.4 A, Single P-Channel +TVS, ChipFETt Package Features •ăLow RDS on MOSFET and TVS Diode ChipFET Package •ăIntegrated Drain Side TVS for 15 kV Contact Discharge ESD http://onsemi.com Protection •ă1.8 V Gate Rating

diode B14A

Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

TPP25011

Abstract: GR-1089-CORE TISP8250D TISP8250DR-S
Contextual Info: oH S CO M PL IA NT TISP8250D *R UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage

marking FtZ sot363

Abstract: marking code IC .ftz FtZ MARKING CODE data sheet transistor PNP NPN/PNP transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Preliminary specification Supersedes data of 1999 Apr 14 2002 May 06 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors

Contextual Info: S CO M PL IA NT TISP8250D *R oH UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage

Contextual Info: oH S CO M PL IA NT TISP8250D *R UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region - Precise and Stable Voltage

marking code diode R12

Abstract: bourns tisp GR-1089-CORE TISP8250D TISP8250DR TISP8250DR-S TPP25011 JESD51-2 "Functional replacement"
Contextual Info: H V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP8250D *R o UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package Top View Ion-Implanted Breakdown Region

dns-mjsuv1-1

Abstract: DNS-MJS-UV1-1 DNY-MJS
Contextual Info: DOMINANT Semiconductors Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

Contextual Info: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

Contextual Info: DOMINANT Opto Technologies Innovating Illumination DomiLED TM DATA SHEET: DomiLEDTM AlGaAs : DDH-GRS TM Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.

Contextual Info: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

Contextual Info: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

GR-1089-CORE

Abstract: TIA-968-A
Contextual Info: CO M PL IA NT TISP3070H3SLL, TISP3250H3SLL, TISP3290H3SLL *R oH S DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SLL Overvoltage Protector Series ITU-T K.20/21 Rating .8 kV 10/700, 200 A 5/310 3-SIP Long Lead Package (Top View)

Contextual Info: DOMINANT Opto Technologies Innovating Illumination DomiLED TM DATA SHEET: DomiLEDTM AlGaAs : DDH-GRS TM TM Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.

Contextual Info: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

MARKING 416 OPTO

Contextual Info: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its

Contextual Info: MX641 COMMUNICATION SEMICONDUCTORS DATA BULLETIN Dual SPM Detector PRELIMINARY INFORMATION Features Applications • Two 12kHz / 16kHz SPM Detectors on a Single Chip • Call Charge Applications on PABX Line Cards • Remote Telephone Applications • Detects 12 or 16kHz SPM Frequencies

marking FtZ sot363

Abstract: marking code IC .ftz 301 marking code PNP transistor BP317 marking code FTZ
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors

Contextual Info: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET: SPNovaTM 1-Watt AlInGaP With Lens SPNova TM Featuring a staggering brilliance and significant flux output, the SPNova showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra