D2003
Abstract: FET MARKING QG FTD2003
Contextual Info: FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage
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ftd20031000mm2981221tm2fxhdd2003+1fet marking qg
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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tnd023ffx504cph5504mch5805+16fx505hpa72rtnd024ffx506mch3301tnd024mp2sk34362sa18722sc60932sc49432sa19702sk38502sk1597tt20842sc52672sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610hkpctc-00002289cph5815mch5815+16mch6629mch6649cph6610cph6614sch1411sch14362sk34362sc60932sa18722sk15972sk38502sc5269tt20842sc49432sc57932sa1970
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K544
Abstract: k427 K669 c4433 k715 AL339 mosfet k544 A1782 K544 F B1235
Contextual Info: SAßSYO F T S . F T D t y p e p a c k a g e : T S S 0 P 8 S : s i n g 1 e , D : d 11 a 1 F S S . F W t y p e ( p a c k a g e ¡S Ó P 8 ) S : s i n g l e , W : d u a l • :T S S 0 P 8 \ V \ DSS ' d\ v) (A > \ 0 .8 1 T S S O P 8 , S O P S 1 2 2 3 Type M O S F E T s
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ftd2007iftd2005iftd2008fss110+16ftd2003ftd2002ifts2003fts2004itf204c2839k544k427k669c4433k715al339mosfet k544a1782k544 fb1235
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