FT-63 EP Search Results

236R

Contextual Info: TECHNICAL DATA Page 1 / 2 STRAIGHT BULKHEAD JACK CRIMP TYPE CABLE SPL < 236raax pan, thick. CM ft 6max ep. panneau -1 H ex .63/Flats Hex 16/Plats (PERÇAGE PANNEAU) Hex .708/Flats (Hex 18/Plats) (MOUNTING HOLT) GD*'" A DIA ÏF A DIA— tH o < □ NOMINAL IMPEDANCE

Siemens MKT

Contextual Info: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.

Contextual Info: SINGLE TURN CERMET TRIMMERS RoHS compliant FT-63 INTERNAL STRUCTURE 2 1 3 4 5 9 6 8 Part name •FEATURES ● RoHS compliant ● Resistance tolerance ± 10 % ● “O” ring sealed Washable: Refer to A-328 ● Suitable for automatic insertion and automatic adjustment

FT-63ETP

Abstract: FT-63ETV FT-63EP FT-63EV FT-63 FT63ETV FT-63ETH FT-63ETS 63EN specifications FT-63E
Contextual Info: SINGLE TURN CERMET TRIMMERS RoHS compliant FT-63 INTERNAL STRUCTURE 2 1 3 4 5 9 8 Part name •FEATURES 1 Housing ● RoHS compliant ● Resistance tolerance ± 10 % ● “O” ring sealed Washable: Refer to A-328 ● Suitable for automatic insertion and automatic adjustment

CO-231

Abstract: CO28* crystal co-401 CO28 CO-286VW CO-447 C0-231V CO-441 CO283vw 446V
Contextual Info: VE CTRON L A B O R A T O R I E S INC 47E D T 4 4 7 32 0 00007 4fl 737 • VEL -T-Sb-lS* VECTRO N U r V l l c VottageContnolled Crystal Oscillators forPhaseLockingApplications See pages 63-66 for linear and wide deviation VCXOs : FEATURES < • Deviation of ± 30 ppm to ft 200 ppm

STA6047

Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
Contextual Info: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|

Phototransistor SFH

Contextual Info: SIEMENS SFH 618 P H Ö T O fT R A N S IS T Q R , 5 .3 K V .T R IO S * * L O W C U R R E N T IN P U T O P T O C O U P LE R Preliminary Data Sheet FEATURES Package Dimensions in Inches mm _.3Q?<7.3)_ • Very High CTR at lp=1 mA, VCE=0.5 V £91 (7.4) - SFH61B-2, 63-125%

ic 7800

Abstract: SVM7803D SVM7806D SVM7807D SVM7808D
Contextual Info: 342 — — 7800 CMOS MELODY IC y'a v 9 • 9 '4 -V-7 O SC l c 1 w m. IC KA/7>^?h 7 □ TST 3 6 □ POUT C 4 5 Z¡ LOUT MT2 C Vss 1 63 rv r o se 8 13 VoD MT1 IZ 2 mmm m . dfafir *an ~T= m •J * s I—»j a ? -s r- ft s. \k - H f — ¡ [. ROM

ic 7800

Abstract: ic a 7800 SVM7803D SVM7806D SVM7807D SVM7808D melody ic SVM7801
Contextual Info: — 342 — 7800 C M O S M E L O D Y IC y'a v 9 • 9'4 -V-7 O SC l c 1 w m. IC KA/7>^?h 7 □ TST 3 6 □ POUT C 4 5 Z¡ LOUT MT2 C Vss 1 63 rv r o se 8 13 VoD MT1 IZ 2 mmm m . dfafir *an ~T= m •J * s I—»j a ? -s r- ft s. \k - H f — ¡

2SC4247

Contextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)

2SC42

Abstract: 2SC4252
Contextual Info: TOSHIBA 2SC4252 T O SH IB A TR A N SIST O R SILICO N NPN EPITAXIAL P LA N A R TYPE 2SC4252 Unit in mm TV TUNER, VHF O SCILLATO R A PP LIC A T IO N S C O M M O N COLLECTOR 2.1 ¿0 .1 • Transition Frequency is High and Dependent on Current Excellently. 1.25Ì0.1

2SC42

Abstract: 2SC4252 Transistor MAV 1 kps6
Contextual Info: TO SH IBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR 2.1 ¿ 0 . 1 • Transition Frequency is High and Dependent on Current Excellently. 1 .25Ì0.1 in ID o MAXIMUM RATINGS (Ta = 25°C)

UPA64H

Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Contextual Info: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S

2SA1608

Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o

2SC4252

Contextual Info: TO SHIBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 TV TUNER, VHF OSCILLATOR APPLICATIONS COM M ON COLLECTOR • Transition Frequency is High and Dependent on Current Excellently. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

uPA77HA

Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,

MPSA63

Abstract: MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MPSA62 Voltage MPSA63/64 Collector-Emitter MPSA62

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

2SC4248

Contextual Info: TOSHIBA 2SC4248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4248 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COM M ON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. M A X IM U M RATINGS (Ta = 25°C)

2SC2719

Abstract: pt 2313 3l-5063 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50
Contextual Info: > > i; 3 n y > i f z . 9 Silicon Transistor N P N X . k ' f + Z 'T J U m S s fJ 3 > Y ' 9 > i > 7 > 9 NPN Silicon Epitaxial Transistor High Frequency Amplifier, Medium Speed Switching Industrial Use 5 .2 P O 2 S A — 600 t 1 1 5 2 ¿ m W 3 > V CEo = y /

2SC4246

Abstract: FA450
Contextual Info: TOSHIBA 2SC4246 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4246 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) 2.1 ± 0.1 • Transition Frequency is High and Dependent on Current

NEC C3568

Abstract: c3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460
Contextual Info: '> >J =3 > s<*7— h Silicon P o w er Transistor 2SC3568 NPNX I = l> h + 9 x i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use 2S C 3568 l i f t S i t X^í 7 f > 9’m t K^=I7 - DC —DC n > -FÿVyXj't, 9, PACKAGE DIMENSIONS U n it : mm)

2SC2718

Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Contextual Info: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS

2SC4246

Contextual Info: TOSHIBA 2SC4246 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4246 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS C O M M O N BASE TV TUNER, UHF CONVERTER APPLICATIONS (C O M M O N BASE) 2.1 ¿0 .1 . 1.25 ± 0.1 . r • . —i Transition Frequency is High and Dependent on Current