FT 300 PB Search Results

PB58

Abstract: PB58A
Contextual Info: 107 - - ► APEX ft * £ ft Ä iS PB58A a£ Vcc V | ffl Se ft ft & * ÜE 1ft | 3 i4ci V ^ ') iil'J 5e v ft ft f+ IS A: + 1 5~ + 150 V 10 25 12 Icc Vcc K ft /E ^ |f t A # ('<9- 7 - * * ) 300 7cc t? ! Tc = 25*C) 14 * ft £ PB58, ( 7c -25°C ) P B 5 8 , /o = 1 .5 A

Contextual Info: Preliminary GS8640E18/32/36T-300/250/200/167 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

GS864036T-250

Abstract: GS864036 GS864018 GS864018T-167 GS864018T-200 GS864018T-250 GS864018T-300 GS864032
Contextual Info: Product Preview GS864018/32/36T-300/250/200/167 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

transistor npn C536

Abstract: c5360 transistor C536 2SC5360
Contextual Info: 2SC5360 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications Unit: mm • High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF typ. • High transition frequency: fT = 100 MHz (typ.) Maximum Ratings (Tc = 25°C)

GS8160V18C

Abstract: GS8160V18CT-250 GS8160V18CT-300 GS8160V18CT-333 GS8160V36C
Contextual Info: Preliminary GS8160V18/36CT-333/300/250 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation • 1.8 V +10%/–10% core power supply

Contextual Info: GS88218/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: GS882V18/36BB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 1.8 V VDD 1.8 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

Contextual Info: Preliminary GS816218/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs Features 300 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

GS882V18B

Abstract: GS882V18BB-250 GS882V18BB-300 GS882V18BB-333 GS882V36B
Contextual Info: GS882V18/36BB/D-333/300/250/200 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–200 MHz 1.8 V VDD 1.8 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output

GS880E18BGT-150

Abstract: GS880E18B GS880E18BT-300 GS880E18BT-333 GS880E32B GS880E36B
Contextual Info: GS880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply

GS88018BT-300I

Abstract: GS88018B GS88018BT-300 GS88018BT-333 GS88032B GS88036B GS88036BGT-150
Contextual Info: GS88018/32/36BT-333/300/250/200/150 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

Contextual Info: Preliminary GS816218A B/D /GS816236A(B/D)/GS816272A(C) MHz–200 MHz 1M x 18, 512K x 36, 256K x 72 300 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

7852A

Abstract: 7851N belden datatwist PB296 Belden Part "Power over Ethernet" M1000
Contextual Info: PB296 DataTwist 4800_FNL.qxd:Layout 1 12/17/10 4:11 PM Page 1 Product Bulletin PB 296 Belden DataTwist ® 4800 Cables DataTwist 4800 UTP Cables provide significant headroom and robust data transmission performance for today’s most demanding applications.

Contextual Info: SS8050 NPN General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage

SS8050

Contextual Info: SS8050 NPN General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage

Contextual Info: WEITRON WTS882 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Power dissipation TO-92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage

Contextual Info: PZTA42 NPN Silicon Planar Epitaxial Transistor * "G" Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

843 SOT-23

Abstract: MMBT2222ALT1G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating

transistor 669A

Abstract: wtm669a h 669A 101B transistor marking 04
Contextual Info: WTM669A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO

transistor 649A

Abstract: 101B WTM649A
Contextual Info: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO

free transistor equivalent book

Abstract: free all transistor equivalent book marking M2 NPN SOT457 MARKING CODE M2 M2 MARKING SOT23 marking code 10 sot23 marking code M2 SOT23 MARKING SOT23 tr2 PNP TRANSISTOR SOT457 MHC126
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product specification 2001 Dec 13 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES PBSS4140DPN QUICK REFERENCE DATA

Contextual Info: MPS2907 MPS2907A PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free TO-92 2 BASE 1 1 EMITTER 2 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO

2SD669A

Abstract: 2SD669
Contextual Info: 2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SD669 2SD669A Unit Collector-Emitter Voltage VCBO 180 180 V Collector-Base Voltage VCEO 120 160

2222a

Abstract: WTM2222A WTM2907A transistor 2222a
Contextual Info: WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 Features: 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C)