FT 1000MHZ Search Results

Contextual Info: Switches GaAs 500 Surface M ountJ Spdt/S p4T WITH TTL Drivers DC to 5 GHz GSWA FREQ. A ft ft GHz ••ft. f1 O L ft E C t T f 1 INSERTION LOSS, dB Id B COMPRESSION, dBm YSWA YSW |geeRF/lF GSWA-4-30DR DC-3 FRDSKJiMCY BAND FRiQ yiN O YftA N !* M W IC Y ftA N D

Contextual Info: TOSHIBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q r m • ■ u rn ■ FT ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TOSHIBA TEN TA TIV E HN9C21 FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q f 71 FT • ■ u rn ■ ■ ■ V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage

TB214

Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
Contextual Info: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100

AN3920K

Abstract: uv8l S10-i2
Contextual Info: AN3920K AN3920K V TR F M * - t ^ 5H BRF7> 7’ R F A m p lifier C irc u it fo r F M Audio of V T R s • ffi w AN 3920K i, VTRcOFM ^ - x" -i * HI 50R FT > v t L t ¿ O f ? t i Y '.'7 ' i ; I t . i M ■ # i ft • iftvEilfilg I • - t — T ' -f - f ^ : V cc = 5V

lS21el2

Abstract: KSC2753
Contextual Info: KSC2753 KSC2753 Low Noise Amplifier for VHF/UHF • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor

KSC2753

Contextual Info: KSC2753 KSC2753 Low Noise Amplifier for Vhf/uhf • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF TO-92 High fT=5GHz 2 NF=1.5dB, S21e = 16dB f=500MHz 2 NF=1.7dB, S21e = 10.5dB (f=1000MHz) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

transistor ft 12

Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR pc 135 UHF transistor GHz RF POWER TRANSISTOR NPN 2SC4247 high power npn UHF transistor Low Noise uhf transistor NPN RF Transistor RF TRANSISTOR
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION •High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise APPLICATIONS ·Designed for TV tuner , UHF oscillator applications.

KSC1730

Contextual Info: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)

Contextual Info: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSC1730

Contextual Info: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

MT3S16U

Contextual Info: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)

Contextual Info: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. : NF = 2.4dB (typ.) (@ 2V, 5mA, 1 GHz)

C583

Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS

2SC3934

Contextual Info: Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

transistor S12

Abstract: 2SC3934
Contextual Info: Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC5261

Abstract: 2SC5464
Contextual Info: TO SH IBA TENTATIVE HN9C21 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C21FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

RDA012M4

Contextual Info: PRELIMINARY SPECIFICATION RDA012M4V2 12 Bit 1.3 GS/s MUXDAC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 12-Bit D/A converter with 1.3 Gsample/s conversion rate 80GHz fT GaAs HBT process Differential Analog Output Power Supplies: -5.2V ± 0.3V, 3.3 ± 0.3V

RDA012M4

Contextual Info: PRELIMINARY SPECIFICATION RDA012M4 12-Bit, 1.3 Gsample/s MUX DAC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 12-Bit D/A converter with 1.3 Gsample/s conversion rate 80GHz fT GaAs HBT process Differential Analog Output Power Supplies: -5.2V ± 0.3V, 3.3 ± 0.3V

2SC5086

Abstract: 2SC5096
Contextual Info: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

2SC5086

Abstract: 2SC5096
Contextual Info: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES