HN9C01 Search Results

HN9C01FE

Contextual Info: TOSHIBA HN9C01 FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS T w n HpviV p s arp hnilt. in t.n flip snnpr-t.Viin an d p Y trp m p sn n p r mini 6pins package : ES6 •o MOUNTED DEVICES

Contextual Info: TOSHIBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q r m • ■ u rn ■ FT ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

2SC5086

Abstract: 2SC5096 HN9C01FE
Contextual Info: TOSHIBA HN9C01 FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 in in O O o o MOUNTED DEVICES

2SC5086

Abstract: 2SC5096
Contextual Info: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

2SC509

Abstract: 2SC5086 2SC5096 HN9C01FT
Contextual Info: T O S H IB A TENTATIVE HN9C01 FT T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE H N9C01FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TO SHIBA TENTATIVE HN9C01 FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C01FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1

Contextual Info: TOSHIBA HN9C01 FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 in in O O o o MOUNTED DEVICES

2SC5086

Abstract: 2SC5096
Contextual Info: TO SH IBA TENTATIVE HN9C01 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz