FST30035 Search Results

pt4013

Contextual Info: Schottkv Rectifiers Part N u m b e r i M icrosem i | D ivision ! i Package O utline I Type . Microsemi Mi Data Spec . Sheet ID IO Am ps) VR IFS M j V F @ IO (Volts) (A m p s) ! (Volts) |- FST30035 C olorado TO -244 STD 6646 300 C PT30040 C olorado STD STD

FST30035

Abstract: FST30040 FST30045 FST30050
Contextual Info: Schottky PowerMod FST30035 - FST30050 M Dim. Inches 6 Min. Baseplate A=Common Anode 1/4-20UNC with Captive Lockwasher v A B C D E F G Baseplate Common Cathode — 1.350 0.700 -3.140 -0.280 Max. 2.450 1.400 0.800 0.625 3.160 3.650 0.300 M illim eters

Contextual Info: S c h o ttk y PowerMod FST30035 - FST30050 y Dim. Inches Baseplate A*Common Anode A B C D E F G V :J- Baseplate Common Cathode 1/+-20UNC with Captive Lockwasher ° » | I w Min. Max. — 1.350 0.700 — 3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300

FST30050

Abstract: FST30035 FST30040 FST30045
Contextual Info: FST30035 - FST30050 Schottky PowerMod A Dim. Inches B V Baseplate A=Common Anode ¥ Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher ° N Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29 17.78 -

FST30035

Abstract: FST30040 FST30045 FST30050
Contextual Info: Schottky PowerMod FST30035 - FST30050 A Dim. Inches B C G Baseplate A=Common Anode E F Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher A B C D E F G Millimeters Min. Max. Min. Max. Notes -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160

MBR20030CTL

Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

R3003

Abstract: FST30035 FST30040 FST30045 FST30050
Contextual Info: S c h o tt k y Pow erMcx FS1f30035 FS1r30050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher °N | W ° Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

BYS93-50

Abstract: BYS93-35 BYS93-40 BYS93-45 FST30035 FST30040 FST30045 FST30050
Contextual Info: CO OR S C O M P O N E N T S "öl INC SchottkyPowerMod 2 D 0 0 1 4 9 DE 12LJ3G0DL, D O D O IM T D - p _ .£ > 3 - ^ ? 3 FST300 V4*20 UNO With ’ Captive Lockwasher Guard Ring Reverse Protection Center Tap 50 Volts Vm u l VfwM 300 Amperes 175°C J unction Temperature

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

SCR 30A 100V

Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
Contextual Info: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in