FSL23 Search Results

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3
Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL234R4 JANSR2N7397
Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 FSL23A0 Rad hard MOSFETS in Harris
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Corporation, Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: JANSR2N7396 S E M I C O N D U C T O R Formerly Available As FSL230R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3
Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL23S Surface Mount Schottky Rectifier Reverse Voltage 30V Forward Current 2A Features • • • • • • • • Super Low VF Schottky barrier diodes Very low profile - typical height of 1.0 mm Low forward voltage drop Low leakage current Moisture sensitivity: level 1, per J-STD-020

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space

1E14

Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,

FSL230R

Abstract: MIL-S-19500 1E14 2E12 FSL230D fsl230
Contextual Info: S E M I C O N D U C T O R FSL230D, FSL230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 5A, 200V, rDS ON = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

Contextual Info: h a f r r is FSL23AOD, FSL23A0R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February1998 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs