FS10KMJ Search Results

FS10KMJ-06

Contextual Info: f MITSUBISHI Nch POWER MOSFET ] FS10KMJ-06 j HIGH-SPEED SWITCHING USE FS10KMJ-06 OUTLINE DRAWING Dimensions in mm • 4V DRIVE • VDSS . 60V • rDS ON (MAX) .70m Q

fs10kmj-03

Abstract: OC37
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-03 HIGH-SPEED SWITCHING USE FS10KMJ-03 • 4V DRIVE • VDSS . 3 0 V • ros ON (MAX) . 75mO

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-3 HIGH-SPEED SWITCHING USE FS10KMJ-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s .150 V rDS ON (M AX). 160 m i 2

FS10KMJ-2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KMJ-2 HIGH-SPEED SWITCHING USE FS10KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE

FS10KMJ-3

Abstract: fs10kmj
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KMJ-3 HIGH-SPEED SWITCHING USE FS10KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE

U403

Contextual Info: MITSUBISHI Nch POWER MOSFET j FS10KMJ-3 I I HIGH-SPEED SWITCHING USE FS10KMJ-3 Dimensions in mm j OUTLINE DRAWING • 4V DRIVE • VDSS .150V • rDS ON (MAX) . 1 60 m Q

cd 551 mosfet

Contextual Info: MITSUBISHI Nch POWER MOSFET ] FS10KMJ-2 ! ! | HIGH-SPEED SWITCHING USE FS10KMJ-2 OUTLINE DRAWING D im e n s io n s in m m • 4V DRIVE • VDSS .100V .0.19Q

FS10KMJ-2

Abstract: 10V-se P channel MOSFET 10A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-2 HIGH-SPEED SWITCHING USE FS10KMJ-2 ' 4V DRIVE ' V d s s . . 100V rDS ON (M A X ). . 0.190

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE FS10KMJ-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s . 60V rDS ON (M AX). 7 0 m i 2

FS10KMJ-06

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KMJ-06 HIGH-SPEED SWITCHING USE FS10KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-03 HIGH-SPEED SWITCHING USE FS10KMJ-03 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s . 3 0 V rDS ON (M AX). 75 m i 2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KMJ-03 HIGH-SPEED SWITCHING USE FS10KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE

FS10KMJ-2

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FS10KMJ-06

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FS10KMJ-3

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

marking code H8

Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Contextual Info: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FS10KMJ-3

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FS10KMJ-2

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device V DSS •d Pd Number Electrical Characteristics

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

gs 8200

Contextual Info: m N EH EX S llO ft FOTITI D dtd Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device

FS10KMJ-06

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog