FS10ASH Search Results

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS10ASH-03 ! i 1 I HIGH-SPEED SWITCHING USE FS10ASH-03 • 2.5V DRIVE • V d s s . •30V • TDS ON (MAX) .

fs10ash

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-3 HIGH-SPEED SWITCHING USE FS10ASH-3 • 2.5V DRIVE • V dss . • TDS ON (MAX) • • I D . • Integrated Fast Recovery Diode (TYP.) .150V •• 160m£2 . 10A .90ns

FS10ASH-06

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 60V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 • 2.5V DRIVE • VDSS . •100V • rDS ON (MAX) . • I D .

FS10ASH-3

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10ASH-3 HIGH-SPEED SWITCHING USE FS10ASH-3 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 150V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 ' 2.5V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 73mi2 .10A 55ns APPLICATION

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡2.5V DRIVE ¡VDSS . 100V

FS10ASH-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 30V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 6.5 5.0 ±0.2 3 ^ -F T 0.9MAX. 0.5 ±0 .2 Í 2.3 C /fl 2.3 i 9 fl GATE DRAIN SOURCE DRAIN • 2.5V DRIVE • VDSS .

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mosfet fs series

Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE (CONTINUED) Electrical characteristics (TYP.) Type No. w FS5ASH-2 ★ FS5UMH-2 FSSVSH-2 FS5KMH-2 FSIOASH-2 FS10UMH-2 * * ★ ★ ★ Hr FStOVSH-2 FSIOKMH-2 FSIOSMH-2 1 v aas ' ★ ★ ★ ★ ★ ★ ★

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS30ASH03

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

Contextual Info: mNEHEX ShOft FOTITI DStS Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device to Pd

Contextual Info: Short Form Data Selector Guide Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C

FS10ASH-06

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FS10ASH-06

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OASH-2 HIGH-SPEED SWITCHING USE FS1 OASH-2 ♦ f ' 2.5V DRIVE ' V . . 1oov ' rDS ON (MAX) . . 0.21 Q. ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) d ss 95ns A P P LIC A TIO N

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OASH-3 HIGH-SPEED SWITCHING USE FS1 OASH-3 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 l] 0 .5 1 0 .2 0.8 Q i ' 2.5V DRIVE ' V d s s . .,150V 160mi2 . 10A

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

Contextual Info: mNBŒX S hO ft FOCITÌ DSt3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics