FRO 24N Search Results

i/4Kx4 SRAM

Contextual Info: * í . y A \ß ü u ü .e d l 0 MITSUBISHI ELECTRONIC DEVICE GROUP ^ a .o u 2ju ù T A n a e r a p c o . n c w -fro f- M5M44409TP-10,-15,-20 Cached DRAM Cached DRAM with 50 to 100 MHz Performance at 4Mb Density M5M44409TP-10, -15, -20 Cached DRAM DESCRIPTION

Contextual Info: HITACHI/ L O G IC /A RRAYS/ NEN ^2 D E I 4 4 ^ 5 0 3 GD1D413 4 J ~ 92D HD74HC165 # 10413 Parallel-load 8-bit Shift Register This 8-bit serial shift register shifts data fro m Q A to Q h T-46-09-05 PIN ARRANGEMENT when clocked. Parallel inputs to each stage are enabled by a

Contextual Info: H I T A C H I / L O G I C / AR R A Y S / M E N DEI 4 4 ^ 2 0 3 DOlOmS ñ |~ D 92D 1 0 4 1 5 HD74HC166 # T-46-09-05 Parallel-load 8-bit Shift Register T h is device is an 8-bit shift register w ith an ou tp u t fro m the | PIN ARRANGEMENT last stage. Data m ay be loaded into the register either in

Contextual Info: HITACHI/ L O G I C / A R R A Y S / f l EM Ì 5 " » E l 4Mci t , 5 a 3 9 2D HD74HC283 # □ □ 1 0 4 7 ci 1 | ~ 10479 4-bit Binary Full Adder The sum £ outputs are provided fo r each b it and the | P IN A R R A N G E M E N T resultant carry (C 4 ) is obtained fro m the fou rth b it. This

FRO 24N

Abstract: DS3905
Contextual Info: M OT OR OL A SC XSTRS/R F Order this data sheet by MTM24N45E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4bE D b3b?as4 b mw\hT&9-/5 Designer's Data Sheet M TM 24N 45E T M O S E-FET High Energy P o w er FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET

24N40E

Contextual Info: MOTOROLA Order this document by MTW24N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 24N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TM OS POWER FET 24 AMPERES 400 VOLTS

FRO 24N

Abstract: 24n40e 24n40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TW 24N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: 2mm x 4mm Rectangular LED Standard Efficiency Tinted, Diffused Dialight 24ND-XXXX TYPE f 1 " • AI[ ir V LED COLOR 24ND-9606 24ND-9607 24ND-9658 f Green Yellow Red * NOT A VALID PART NUM BER. TH IS SH EET IS FOR R EFER E N C E ONLY. ABSOLUTE M A X IM U M RATING S TA=25°C |

TC59S1608AFT-10

Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616
Contextual Info: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits

mk62486q19

Contextual Info: SGS-THOMSON MK62486 IO VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32K x 9 CMOS SYNCHRONOUS BURSTSRAM FAST CYCLE TIMES: 25, 30ns FAST ACCESS: 19, 24ns Max ON-BOARD BURST COUNTER INPUT REGISTERS ADDR.,DATA,CTRL SELF-TIMED WRITE CYCLE THREE STATE COMMON I/O

Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory designed to sup port high speed

TWS 434 pin diagram

Abstract: SRAM timing
Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory designed to sup port high speed

FRO 24N

Abstract: 75325 75325N 55325
Contextual Info: 55/75325-F,N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION T h e 55325 and 753Z5 are m o n o lith ic inte­ grated c irc u it m e m ory drive rs w ith lo g ic in p u ts and are desig ned fo r use w ith m ag­ n e tic m em ories. F,N PACKAGE SO UR C E rrr~ C O LL E C T O R S L i .

Contextual Info: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran­ dom A cce ss M em ory de sig ned to sup port high speed

tm 48f 038 transformer

Abstract: Transformer tm 48f 038 LR38879 LG platinum color tv 21 inches SCMXCJC SCM5B49 SCMD-IAC5 sensor an503 SCM5B32 yp 4201
Contextual Info: Product Catalog S C Ü S e r i« Isolated Signal Conditioning Products DATAFORTH A B u rr -B r o w n C o m p a n y Dataforth Corporation Dataforth C orporation was established in 1984 and has become a w orldw ide leader in the design and m anufacture of signal

RAS 1210 SUN HOLD

Abstract: sun hold RAS 1220 sun hold ras 1210
Contextual Info: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns

Analog Delay Lines

Abstract: SLTN analog delay line
Contextual Info: A n a lo g in p u t a nd o u tp u t A ll d e la y s d ig ita lly p ro g ra m m a b le D e la ys s ta b le a n d p re cise 1 4 -p in DIP p a c k a g e .2 4 0 hig h A v a ila b le in d e la y s u p to 3 6 n s A v a ila b le in 1 0 d e la y s te p s w ith re s o lu tio n

Contextual Info: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM

SN75325N

Abstract: SN55325J SN75325 SN75325J FRO 24N 75325 SN55325 SN55325W
Contextual Info: Am55/75325 Memory Drivers Distinctive Characteristics • • • 600m A output source/sink capability O utput short circuit protection ^ ^ T w o source outputs and two sink outputs Source strobe input and sink strobe input 24 volt output range 100% reliability assurance testing in compliance with

IDT71586

Abstract: 82C307 71586 chip and technology 82c307 82c307 cache controller 71586S25
Contextual Info: tfggâS'x f df Integrated Device Technology, Inc. CMOS STATIC RAM 64K (4Kx 16-BIT) LATCHED CacheRAM IDT71586 FEATURES: DESCRIPTION: • W ide 4K x 16 Organization • High-speed access — Com m ercial: 25 /3 5 /4 5 n s (m ax.) — Military: 35 /45/5 5n s (max.)

KM4132G512Q

Abstract: BA 59 04A F P SM 11039 sgram
Contextual Info: SGRAM MODULE KM M 965G112Q P N / KMM966G112Q(P)N 8MB SGRAM MODULE (1 Mx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 . i _ &prrranNre This Material Copyrighted By Its Respective Manufacturer

mux lf11508

Abstract: LF11508 mux24 mux 08 application notes AD7506 DG509 HI-508A IH5108 IH6108 MUX-08
Contextual Info: AN ALO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 □ FEATURES • • • • • • • • JFET Switches Rather Than CMOS Low “ON ” Resistance . 22011 ly p

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM HD74HCT620 HD74HCT623 im plem entation De | 4m tBD3 O D l Q b U 1 7 I • Octal Bus Transceivers with inverted 3 -state outputs) • Octal Bus Transceivers (w ith 3 -state outputs) This octal bus transceiver is designed fo r asynchronous tw oway com m unication between data buses. The control func­

KM4132G512Q

Abstract: SM 11039 G511
Contextual Info: SGRAM MODULE KM M 965G511 Q P N / KMM966G511Q(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 . ]. ELECTRONICS This Material Copyrighted By Its Respective Manufacturer