FRI 53 Search Results

Contextual Info: npOnme 42 Fri Feb 26 08:04:57 1999 Philips Com ponents Product specification Surface mount ceramic multilayer capacitors TFEATURES Class 1, NP0 50/100/200/500 V Noble Metal Electrode Q UICK REFERENCE DATA • Seven standard sizes DESCRIPTION • High capacitance per unit volum e

37C65

Abstract: c5287 FE3001 FE3031 T58-T57 D 80287-8 em-180 PFA 10Z FE3010B FE3021
Contextual Info: WESTERN DIGITAL CORP 4QE D m =1710220 Q0QbSS3 Q •■ bil>C fri . „ SYST EM S L Ö GIC / P ERIP H ERA L " ' I ^ T S 1 ^ 3 » '2 . \ FE3021 Address Buffer and Memory Controller •HÜWESTERN DIGITAL H Powered by ICminer.com Electronic-Library Service CopyRight 2003

ycbcr 16bit 8bit

Abstract: CCIR 601 matrix "RGB to YCbCr" 50 YXG 22 M dcf CLOCK "RGB to YCbCr" AND color space conversion 24bit rgb input to 8bit rgb output 3x3 matrix Banding CMOS DIGITAL CAMERA 640x480
Contextual Info: HV7131GP CMOS Image Sensor with Image Signal Processing HV7131GP Preliminary V2.0 2003/ 03 / 12 V2.0 1 HV7131GP Revision History Revision Script Date Comments V1.0 2001/11/08/Thu – 2001/11/14/Thu V1.1 2001/12/21/Fri - HV7131GP Preliminary is released - Gamma slope table of Knee/De-Knee is added,

moc 300v

Abstract: moc 7002
Contextual Info: ISOCOM COMPONENTS LTD 4SE D • 4flflbS10 DOQOHSM 5 ■ ISO | MOC 8111X, MQC 8112X, MOC 8113X », f, M,t ■■ jffgwM,i -m{ =”1-'.fr-'#fr-fri Üa* -i■ " OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT : f DESCRIPTION The MOC 811IX,8112X.8113X are optically coupled

Contextual Info: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING

Contextual Info: OrOerna .7j r i or : EiWrtKM1 CMOS LSI Ndl fri;» i J LC322260J, T-70/Ö0 S A \m 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Read/Write i Preliminary Overview Package Dimension# The LC3222ííOÍ, T are CMOS oynamic RAM», Operiti rig on a single 5 V power source and having a J3-1Of/2 words x

Contextual Info: L64105ds 1 Fri Sep 5 17:06:27 1997 L64105 MPEG-2 Audio/Video Decoder LSI LOGIC P relim inary Datasheet The L64105 is an integrated, low-cost source audio/video A/V decoder for use in MPEG-2 A/V decoding systems. The system block diagram in Figure 1 shows an application of the L64105 within an MPEG-2 system.

Contextual Info: AN5755 AN5755 Voltage Deflection Signal Processor Circuit \y • m s AN5755 !±, 11«I± c SSt ? n x -tc ■ 41 I • ft ICRTcO 5 -i > - f \ tl 7 -C R TW 3 'i > f• vi-?4y°<n%M%k:t m m i r m > K t b , K w t - < fri-'o ■ Features • B /W tube : about 5 inches ; colortube : about 3 inches.

2SK1112

Abstract: IL1B
Contextual Info: ö 5ë 7S* Sn o 00 it »ri dfQl ? ö IS 5fv mPSIimìn xtr rï n V -*• r • 3E Xír 3 P ñ -iV a > v. . 1 >* 3¡ £ m ss 3* iS îff ít « a » 50 r+ cr n!l n iY a 1 -X ~r iÜ » • v: I •• fri "0 o P+50 sr o cr i p -n Ta = 2 5°C TOSHIBA rv ctn

ETS564

Abstract: SP705 7356 54-619 bc 147 transistor BC 331 BC 536 transistor bc 548 SP706 SP813LEN-L
Contextual Info: Product Characterization Report for the SP705 Family of Products SP705, SP706, SP813 Products Prepared By: Salvador Wu & Greg West Date: February 16, 2007 SP705 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure

ICX205

Abstract: S2513 AVD1 CXA2006Q CXD2311AR CXD2460R ICX205AK VOM101 VOM102
Contextual Info: CXD2460R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2460R is an IC developed to generate the timing pulses required by Progressive Scan CCD image sensors as well as signal processing circuits. Features • Electronic shutter function

7-day timer

Abstract: h5s-fb 4 kv output circuit time switch PFP-100N PFP-100N2 PFP-50N 001005S H5S-WB2D Y92A-72
Contextual Info: Digital Time Switch H5S Easier, More Convenient Time Switches, with New 4-circuit Output and Yearly Models in Addition to 2-circuit Weekly Models • Independent Day Keys provide easier operation. • Temporary holiday setting function makes it easy to turn OFF

Contextual Info: ,O N Y I_ C X D 2 4 6 0 R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2460R is an 1C developed to generate the timing pulses required by Progressive Scan CCD image sensors as well as signal processing circuits. Features

D1N5400

Abstract: PK 1N5406 1N5400 1N5400RL 1N5401 1N5401RL 1N5402 1N5402RL 1N5404 1N5406
Contextual Info: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial-Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:

NTP15N40

Abstract: NTB15N40 NTB15N40T4
Contextual Info: NTP15N40, NTB15N40 Preferred Device Advance Information Power MOSFET 15 Amps, 400 Volts N–Channel TO–220 and D2PAK http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

NTB8N50

Abstract: NTB8N50T4 NTP8N50
Contextual Info: NTP8N50, NTB8N50 Preferred Device Advance Information Power MOSFET 8 Amps, 500 Volts N–Channel TO–220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com

25e5

Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3
Contextual Info: AND8050/D SPICE Device Model NTHS55445T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The

SS65600

Abstract: GI006 76um
Contextual Info: DATE REV ECN APP'D. BY AO - - 1 -1 7 -0 6 A1 7435 JM 6/23/06 BO 7663 JM 0 2 -0 9 -0 5 -— 1oc r - iio i +.020 [0.51] •125 [3-18] -.010 [0.25] .535 [13.59] MAX. □ B B .251 [6.371] -.650 [16.51] • .125 [3.175] 2 NOTES: 1. CONNECTOR MATERIALS: HOUSING: THERMOPLASTIC UL94 V -0

403B

Abstract: TTC 103 tvs SMC MARKING marking RKC 1SMA10CAT3 1SMA11CAT3 1SMA12CAT3 1SMA13CAT3 1SMA14CAT3 1SMA15CAT3
Contextual Info: 1SMA10CAT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener

403C

Abstract: MMT05B230T3 MMT05B260T3 MMT05B310T3
Contextual Info: MMT05B230T3, MMT05B260T3, MMT05B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices TSPD prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover–triggered crowbar

MUR405

Abstract: mur 460 data mur460 mur460 datasheet MUR405RL MUR410 MUR410RL MUR415 MUR415RL MUR420
Contextual Info: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MUR420 and MUR460 are Preferred Devices Switchmode Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features:

1N5908 diode

Abstract: zener diode 1n5908 1N5908 bidirectional clipper 1N5908RL4 1N6267A 1N6303A 5KE18CA
Contextual Info: 1N5908 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener

ON Semiconductor 831B

Abstract: 813b zener 816b 831b Onsemi 818B 829B 403B-01 834b 840b ON code 829B
Contextual Info: 1SMA5913BT3 Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 1.5 Watt Zener Diodes offers the following advantages. http://onsemi.com Specification Features: • • • • • • Standard Zener Breakdown Voltage Range – 3.3 V to 68 V

MTB55N06Z

Abstract: MTB55N06ZT4
Contextual Info: MTB55N06Z Preferred Device Power MOSFET 55 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This high energy device also offers a drain–to–source diode with fast recovery time. Designed for