FREE DOWNLOAD TRANSISTOR AND IC EQUIVALENT DATA Search Results

pb4350

Abstract: free transistor and ic equivalent data free transistor pb435 free download transistor and ic equivalent data PBSS5350 TRANSISTOR SMD MARKING CODE R 73 free download transistor data sheet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES

pb5350

Abstract: free transistor and ic equivalent data smd transistors code PBSS5350Z free transistor free download transistor and ic equivalent data
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Nov 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES

IC 74115

Abstract: free transistor and ic equivalent data MARKING CODE 42 free transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

free transistor and ic equivalent data

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

smd TRANSISTOR H2 MARKING CODE

Abstract: TRANSISTOR SMD catalog h2 SOT66x TRANSISTOR SMD MARKING CODE H2 marking code H2 free transistor and ic equivalent data PEMH1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH1 NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

all transistor book

Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A

BLOCK DIAGRAM NE602

Abstract: SA602A Signetics NE602 Crystal Radio applications an1983 philips an1982 MARKING CODE 50602 SA602AN
Contextual Info: RF COMMUNICATIONS PRODUCTS SA602A Double-balanced mixer and oscillator Product specification Replaces datasheet of April 17, 1990 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Double-balanced mixer and oscillator

electronic power generator using transistor projects

Abstract: FUNCTIONAL APPLICATION OF 74LS138 free transistor and ic equivalent data matlab circuits 2N7000 MOSFET 74LS138 AD620 CD74HC4051 CY8C27443 AN40119
Contextual Info: Automatic System for IC Characterization: The DC Approach AN40119 Author E. Montoya-Suárez, F. Sandoval-Ibarra Associated Project: No Associated Part Family: CY8C27xxx GET FREE SAMPLES HERE Software Version: PSoC Designer 4.2 Associated Application Notes: AN2096, AN2089

NSS40300MD

Contextual Info: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low

NSV40300

Abstract: P40300 free transistor and ic equivalent data NSS40300MD
Contextual Info: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low

MJF47G

Contextual Info: MJF47G High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the

Contextual Info: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the

221D

Abstract: AN1040 MJF47 MJF47G TIP47
Contextual Info: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the

to225aa

Abstract: BD678 bd676 BD682 equivalent to225aa case
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.

BD249C equivalent

Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

NJVMJD47T4G

Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

PPAP MANUAL for automotive industry

Abstract: SNSS30201MR6T1G free transistor and ic equivalent data
Contextual Info: NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

free transistor and ic equivalent data

Contextual Info: NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

Contextual Info: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the

bd249c equivalent

Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2
Contextual Info: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125

Micro-X Marking E

Abstract: marking 47 gain block sot-363 SOT89 marking GA ecg006f sot-363 gain blocks SOT-363 marking ROHM Micro-X Marking v micro-x marking 3
Contextual Info: ECG006 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 15 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 32 dBm Output IP3 at 1000 MHz 4.0 dB Noise Figure at 2000 MHz

ECG001C-500

Abstract: SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000
Contextual Info: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz