FRE160H Search Results

Contextual Info: FRE160D, FRE160R, FRE160H 41 A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41 A, 100V, RDS on = 0.050S1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

FRE160R

Abstract: 2E12 FRE160D FRE160H
Contextual Info: FRE160D, FRE160R, FRE160H 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41A, 100V, RDS on = 0.050Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

delta plc

Abstract: 2E12 FRE160D FRE160H FRE160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRE160D, FRE160R, FRE160H 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41A, 100V, RDS on = 0.050Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

75852G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Contextual Info: HUF75852G3 Data Sheet April 2000 File Number 4846 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

75852G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Contextual Info: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

Contextual Info: æ H A R R is S E M I C O N D U C T O R FRE160D, FRE160R, FfíE160H 41 A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41A, 100V, RDS on = Q.OSOQ TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: