FR-4 ROGER Search Results

HMC313

Contextual Info: HMC313 MICROWAVE CORPORATION HBT BROADBAND AMPLIFIER GAIN BLOCK DC - 6.0 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.1100 Features General Description P1dB Output Power: +19 dBm The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that

HMC315

Contextual Info: HMC315 MICROWAVE CORPORATION HBT DARLINGTON AMPLIFIER DC - 7.0 GHz V00.1100 FEBRUARY 2001 General Description Saturated Output Power: + 17 dBm The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive

HMC320MS8G

Contextual Info: HMC320MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER 5.0 - 6.0 GHz FEBRUARY 2001 V00.0900 Features General Description Selectable Functionality: LNA, Driver, or LO Buffer Amp The HMC320MS8G is a low cost C-band fixed gain Low Noise Amplifier LNA that serves the

HMC261LM1

Contextual Info: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true

HMC308

Contextual Info: HMC308 MICROWAVE CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 FEBRUARY 2001 General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V Vdd supply. The surface mount SOT26 amplifier

HMC318MS8G

Contextual Info: HMC318MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz FEBRUARY 2001 Features General Description LNA with 18 dB Gain Control The HMC318MS8G is a surface mount low cost C-band variable gain low noise amplifier VGLNA that serves the full UNII and HiperLAN

HMC314

Contextual Info: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This

HMC286

Contextual Info: HMC286 MICROWAVE CORPORATION LOW NOISE AMPLIFIER 2.3 - 2.5 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.0900 Features General Description 2.4 GHz LNA The HMC286 is a low cost Low Noise Amplifier LNA for 2.3 to 2.5 GHz spread spectrum applications including BLUETOOTH, HomeRF,

HMC324MS8G

Contextual Info: HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that contains two un-connected

MPN3401

Abstract: Nytronics WEE MC12060 MSD7000 motorola msd7000 diode array MC12061 AN756 crystal diode AN-756 MCI2061
Contextual Info: AN-151 Application Note CRYSTAL SWITCHING METHODS FOR MC12060/MC12061 OSCILLATORS Prepared by John Hatchett Roger Janikowski A pplications Engineering This report discusses methods o f using diodes to select series resonant crystals electronically. C ircu it designs

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PRO PRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC. PRELIMINARY S C H E M A T IC PH Y E L E C T R IC A L RJ 2 o— CHI TCT1 CHI 23 TX1+

HMC283LM1

Abstract: 27 - 33 GHz GaAs Tripler MMIC gaas amplifier
Contextual Info: HMC283LM1 MICROWAVE CORPORATION SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz V02.1100 FEBRUARY 2001 General Description SMT mmWAVE PACKAGE The HMC283LM1 is a Medium Power Amplifier MPA in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband

HMC268LM1

Contextual Info: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1

DA relais

Abstract: reedrelais
Contextual Info: MEDER electronic 7 GHz HF-REEDRELAIS Testvorschläge für Relais der Frequenzdomäne und der Zeitdomäne Um HF-Bauteile wie Reedrelais über 100 MHz fachmännisch testen zu können, sind zwei Voraussetzungen grundwichtig: ein Netzwerk-analysator sowie gute Prüfaufnahmen für das Kalibrieren und Testen der Komponenten. Dasselbe trifft auf Messungen der Zeitdomäne

TRANSISTOR ML6

Contextual Info: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

R04350B

Contextual Info: REVISIONS THIRD ANGLE PROJECTION 4 REV OR SU G G ESTED DESCRIPTION NEW RELEASE ECN No. Ml 19547 MOUNTING CONFIGURATION HU 1 5 7 4 C A S E S T Y L E . ” 1 4 S Q 0 5 ” fh -f v |/^ - v|/ -"+• DATE DR A U T H 09/17/08 AV HY FOR PIN CODE 41X 0.020 PTH FOR GROUND

transistor smd 1Bp

Abstract: PL080 R04350B
Contextual Info: REV OR À REVISIONS DESCRIPTION ECN No. M94649 M102713 DATE DR AUTH 10/11/04 MMG WL 01/14/06 GF IL NEW RELEASE ADDED ".WITH SMOBC" S U G G E S T E D MOUNTING CONFIGURATION FOR B J 2 9 5 C A S E S T Y L E . ” h p ” PIN CO N N ECTIO N . 20X 0 .0 2 0 PTH

CAP 0805 ATC 600F

Abstract: SPLITTER-COMBINER Ferrite Circulators at 15 ghz CT11020T0050J 13.56 MHz spiral antenna ATC 600F atc 100e hybrid - tesla CT13737T0050J02 CT12010T0050J
Contextual Info: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY QUICK REFERENCE PRODUCT SELECTION GUIDE Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications

Contextual Info: WPS-495922-02 4.9 – 5.9 GHz Linear Power Amplifier Data Sheet June 2006 Features: Applications: • 11.0 dB Gain • 802.16 WiMax • 32 dBm P1dB • 802.11 WLAN • 47 dBm IP3 • Wireless Communications • EVM < 2.5% at 26 dBm Pout • Telecomm Infrastructure

Contextual Info: NB7V33MMNGEVB NB7V33MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB7L72MMNGEVB NB7L72MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6L611MNGEVB NB6L611MNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6L14MMNGEVB NB6L14MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6N14SMNGEVB NB6N14SMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly