FR-4 ROGER Search Results

HMC313

Contextual Info: HMC313 MICROWAVE CORPORATION HBT BROADBAND AMPLIFIER GAIN BLOCK DC - 6.0 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.1100 Features General Description P1dB Output Power: +19 dBm The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that

HMC315

Contextual Info: HMC315 MICROWAVE CORPORATION HBT DARLINGTON AMPLIFIER DC - 7.0 GHz V00.1100 FEBRUARY 2001 General Description Saturated Output Power: + 17 dBm The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive

HMC320MS8G

Contextual Info: HMC320MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER 5.0 - 6.0 GHz FEBRUARY 2001 V00.0900 Features General Description Selectable Functionality: LNA, Driver, or LO Buffer Amp The HMC320MS8G is a low cost C-band fixed gain Low Noise Amplifier LNA that serves the

HMC261LM1

Contextual Info: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true

HMC308

Contextual Info: HMC308 MICROWAVE CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 FEBRUARY 2001 General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V Vdd supply. The surface mount SOT26 amplifier

HMC318MS8G

Contextual Info: HMC318MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz FEBRUARY 2001 Features General Description LNA with 18 dB Gain Control The HMC318MS8G is a surface mount low cost C-band variable gain low noise amplifier VGLNA that serves the full UNII and HiperLAN

HMC314

Contextual Info: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This

HMC286

Contextual Info: HMC286 MICROWAVE CORPORATION LOW NOISE AMPLIFIER 2.3 - 2.5 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.0900 Features General Description 2.4 GHz LNA The HMC286 is a low cost Low Noise Amplifier LNA for 2.3 to 2.5 GHz spread spectrum applications including BLUETOOTH, HomeRF,

HMC324MS8G

Contextual Info: HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that contains two un-connected

MPN3401

Abstract: Nytronics WEE MC12060 MSD7000 motorola msd7000 diode array MC12061 AN756 crystal diode AN-756 MCI2061
Contextual Info: AN-151 Application Note CRYSTAL SWITCHING METHODS FOR MC12060/MC12061 OSCILLATORS Prepared by John Hatchett Roger Janikowski A pplications Engineering This report discusses methods o f using diodes to select series resonant crystals electronically. C ircu it designs

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PRO PRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC. PRELIMINARY S C H E M A T IC PH Y E L E C T R IC A L RJ 2 o— CHI TCT1 CHI 23 TX1+

HMC283LM1

Abstract: 27 - 33 GHz GaAs Tripler MMIC gaas amplifier
Contextual Info: HMC283LM1 MICROWAVE CORPORATION SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz V02.1100 FEBRUARY 2001 General Description SMT mmWAVE PACKAGE The HMC283LM1 is a Medium Power Amplifier MPA in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband

HMC268LM1

Contextual Info: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1

DA relais

Abstract: reedrelais
Contextual Info: MEDER electronic 7 GHz HF-REEDRELAIS Testvorschläge für Relais der Frequenzdomäne und der Zeitdomäne Um HF-Bauteile wie Reedrelais über 100 MHz fachmännisch testen zu können, sind zwei Voraussetzungen grundwichtig: ein Netzwerk-analysator sowie gute Prüfaufnahmen für das Kalibrieren und Testen der Komponenten. Dasselbe trifft auf Messungen der Zeitdomäne

transistor smd 1Bp

Abstract: PL080 R04350B
Contextual Info: REV OR À REVISIONS DESCRIPTION ECN No. M94649 M102713 DATE DR AUTH 10/11/04 MMG WL 01/14/06 GF IL NEW RELEASE ADDED ".WITH SMOBC" S U G G E S T E D MOUNTING CONFIGURATION FOR B J 2 9 5 C A S E S T Y L E . ” h p ” PIN CO N N ECTIO N . 20X 0 .0 2 0 PTH

Contextual Info: WPS-495922-02 4.9 – 5.9 GHz Linear Power Amplifier Data Sheet June 2006 Features: Applications: • 11.0 dB Gain • 802.16 WiMax • 32 dBm P1dB • 802.11 WLAN • 47 dBm IP3 • Wireless Communications • EVM < 2.5% at 26 dBm Pout • Telecomm Infrastructure

Contextual Info: NB6L611MNGEVB NB6L611MNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6L14MMNGEVB NB6L14MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6N14SMNGEVB NB6N14SMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6L72MNGEVB NB6L72MNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB7L14MNGEVB NB7L14MNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB7V32MMNGEVB NB7V32MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6L72MMNGEVB NB6L72MMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly

Contextual Info: NB6N11SMNGEVB NB6N11SMNG Evaluation Board User's Manual http://onsemi.com Introduction ON Semiconductor has developed the QFN16EVB evaluation board for its high-performance devices packaged in the 16-pin QFN. This evaluation board was designed to provide a flexible and convenient platform to quickly