FR 253/30 R Search Results

FR 220

Abstract: FR251 FR257
Contextual Info: SIYU R FR251 . FR257 Fast Recovery Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.5 A DO-27 Features 1.0 25.4 MIN .052(1.3) DIA .048(1.2) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .375(9.5)

OKI MSM3732

Abstract: 3732a
Contextual Info: OKI semiconductor MSM3732AS/RS 32,768-BIT D YNAM IC RANDOM ACCESS M EM O RY G E N E R A L DESC RIPTIO N T h e O k i M S M 3 7 3 2 H / L is a f u l l y d e c o d e d , d y n a m ic N M O S ra n d o m access m e m o r y o rg a n iz e d as 3 2 ,7 6 8 o n e *b it w o rd s.

2N5760

Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545
Contextual Info: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current

Contextual Info: LFFS détecteur de niveau Avantages particuliers „„ Parties en contact avec le „„ Mesure de fluides avec des fluide en acier inoxydable résistant aux acides et en PEEK „„ Design hygiénique, compact, compatible avec les aliments „„ Connexions hygiéniques

Contextual Info: □ Mini-Circuits 50 ohms and 75 ohms ZSC-3 ZMSC-3 ISOLATION dB FREQ. RANGE MHz M O D EL NO. M L W Typ. Min Typ. Min. u Typ. Min. L M Typ. Max. U L Typ. Max. Typ. Max. ZFSC-3-1 ZFSC-3-1W ZFSC-3-13 ZFSC-3-4 1-500 2-750 1-200 1-1000 30 30 45 35 20 20 30 20 30 20

LF 353

Abstract: 8 pins IC LF 353 n
Contextual Info: SGS-TUOMSON tras/î/B LF353/A/B J-FET INPUT DUAL OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION ■ HIGH INPUT IMPEDANCE J-FET INPUT STAGE ■ INTERNAL FREQUENCY COMPENSATION

2N5979

Abstract: 2n5978 2N5985 2N5984 2SB585 2SB587 2SB588 2SB5 2SB568 st 2n3055
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

B 504 Potentiometers

Abstract: B 503 10 pin Potentiometers
Contextual Info: Type F H o t-M o ld e d Trim ming Potentiom eters Features_ •5000 Mechanical Cycles ■Linear and Non-Linear Tapers ■Immersion Sealed . Benefits- ■Very Long Rotational Life ■Versatility ■Washable AVAILABILITY

SC 2272

Abstract: EPDZ3300 CD6171 36077 168 seg pj 454 cd 30238 QFP256 8936 v3 ADD12
Contextual Info: V0 C2C2+ C1C1+ V4 V3 V2 V1 VR VX VOUT A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 HSIN-CHU: NO. 12, INNOVATION RD. 1, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN, R. O. C. TEL: 886-3-5639977 FAX: 886-3-5780617 PWD_DN PLLC 473 VSS 32768Hz 20pF 20pF

Contextual Info: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage

M39015

Abstract: JM39015 ATR panel pin RT12C2Y101 RT24C2W501 MARKING CODE T5E RT12C2 marking code TS RT22C2P103 RTR24DW202
Contextual Info: f i - x f-G ? 1/2” SQUARE / MULTITURN / WIREWOUND SEALED • Listed on the QPL for style RT22 per MIL-R-27208 and RTR22 per High-Rel MIL-R-39015 POURNS Model 3250/RT22/RTR22 Bourns Trimming Potentiometer Electrical C haracteristics Standard Resistance Range

220 volt transformer for ups

Abstract: 100AH battery charging panasonic msds
Contextual Info: PG-12V103 FR 12 Volt 111 AH @ 20-hr. rate 103 AH @ 10-hr. rate Features • Long Service Life - Thick plate design and efficient gas recombination yield a service life expectancy of up to 10 years in standby mode, making the battery ideally suited for UPS

Contextual Info: Light Emitting Diodes 5 X 7 matrix displays LM-2035 Series T h e L M -2 0 3 5 s e rie s a re 5 X 7 m a tr ix ►External d im e n s io n s U nit: m m d is p la y s w h ic h c a n b e u s e d in a w id e v a r ie ty o f a p p lic a tio n s , in c lu d in g a l­

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2982 STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: h F E i = 140~600 • Low Collector-Emitter Saturation Voltage: Vce sat = 0.5V • Collector Dissipation Pc =1 ~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

TRANSISTOR 1003

Contextual Info: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SPRA GU E. INC =13 D • 0SD433Û S E M I C O N D S / ICS ÜGD3S7b T ■ ALGR 9 3 D 035 76 Ï * ' ' Ö BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO DC Current Gain

2N6328

Abstract: 2N6326 2n6328 texas instruments tip 410 transistor 2n6321 2N6327 2N6329 2N6330 2N6331 transistor BD 325
Contextual Info: T Y P E S 2N6 3 26 , 2 N 6 3 2 7 , 2N6 3 28 N -P - N S I N G L E - D I F F U S E D M E S A S I L I C O N P O W E R T R A N S IS T O R S FOR P O W E R A M P L IF IE R A N D H IG H-SPEED-SW ITCHING APPLIC A TIO N S D ESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2N 63 29, 2N 63 30, 2N6331

Contextual Info: s e MIKROn Fast Recovery Rectifier Diodes maximum values for continuous operation 30 A 47 A 72 A V r sm I fr m s V r rm IfA V (sin. 180; Tease = 85 °C; 50 Hz) 48 A SKR20 F SKR 31 F SKR 48 F V 20 A 31 A 1000 SKR 20F10 SKR 31F10 SKR 48F10 1200 SKR 20F12 SKR 31F12

Avantek rf amplifier APM-1033

Contextual Info: AVANTEK INC 44E D AVAN TSK m im iU b 00 0 7 cm2 3 • AVA P P A -253 S u rfa c e M o u n t C a s c a d a b le A m p lifie r 5 to 200 M H z ' -oq-o\ , FEATURES APPLICATIONS • • • • • • • High Gain Single Stage Gain Block • Portable or Compact RF/IF

COM205

Abstract: COM208 COM226 COM89 COM180 COM219 SSD1882T1R COM228 IC 2732 pdf datasheet NC30
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA Advance Information SSD1882 MLA ROW COMMON DRIVER CMOS The SSD1882 is an MLA (Multi Line Addressing) common driver equiped with 240 triple-value low resistance outputs. Combining with the SSD1730 MLA power chip and the SSD1870 column driver, an MLA LCD module system having high picture

2SC2958

Abstract: transistor AE 2SC2959 2SA1221 F0246
Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Y229

Abstract: Y184 XCK 240 st8024 sitronix Sitronix LCD common driver ST8024 Y239 Y121 st 9635 y200 resistor
Contextual Info: ST Sitronix ST8024 240 Output LCD Common/Segment driver IC PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change 1. DESCRIPTION y Line latch circuits are reset when DISPOFF active The ST8024 is a 240-output segment/common driver

MC3448A

Abstract: MC3448AP M6800 MC3448AD MC68488 488-1978-bus
Contextual Info: g MOTOROLA M C 3 4 4 8A Q uad B id ire c tio n a l In s tru m e n ta tio n Bus (GPIB) T ra n s c e iv e r This bidirectional bus transceiver is intended as the interface between TTL or MOS logic and the IEEE Standard Instrumentation Bus (488-1978, often referred to as GPIB). The required bus termination is internally