FR 151 DIODE Search Results

FR152

Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Contextual Info: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

FR 151 diode

Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Contextual Info: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode

Contextual Info: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode

Contextual Info: ER B 43 o.5a> : O utline D raw ings FAST RECOVERY DIODE • I t A : Features ■ S High voltage by mesa design. tjv : M arking • A ftliii High reliability A 5-3-F C o lo r code G reen BS£ » £ ■ f f liis I A p p lica tio n s A b rid g e d ty p e n a m e "'

DIODE B36

Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —

Contextual Info: E R D 8 - 0 4 I 1 5 A SCHOTTKY BARRIER DIODE ’ Features • 1&Vk Low VF Super high speed sw itchin g. im s m e Connection Diagram High reliability by planer design • E jiH : Applications High speed pow er sw itchin g. Maximum Ratings and Characteristics

SM-150 diode

Contextual Info: ERC04 i.2A S ± 'J : Outline Drawings GENERAL USE RECTIFIER DIODE r -r ¿1.0 TI - 28MIN •— 7.5 8MIN - - ■ 4 * J t : Features • W ide voltage class • S ifiifS tt ■ f c iv : M arking High reliability : Applications Ä 7 -3 -F : Color code

Contextual Info: S I G 0 3 2 i a (tiro a ) • - i & m m t ? * f * - K _ : Outline Drawings GENERAL-USE RECTIFIER DIODE : Features • Diffused-junction • H /± High voltage capability # 7 'y ! i7 > 'vxliB fisB iE • Excellent avaranche characteristics

2RI150E

Abstract: C-15
Contextual Info: 2 R I 1 5 0 E 2 x 150a : Outline Drawings POWER DIODE MODULE 20.0 20.0 , .20.0 L?0.0, 3-»6.S • IrfJ I : Features • • • • 0 25.0 . 38.0 68.5 1 25.0_[. 31.0 68.5^ H. it ‘ Large Capacitance Insulated Type Easy Connection - *>3 Glass Passivation Chip

6DI30M-120

Abstract: M613 T760 VE60
Contextual Info: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • • hFEA^&i,' High Arm Short Circuit Capability High DC Current Gain • 7 ' J ' J FfajBL 11 |e J Including F re e w h e e lin g Diode • Ifei¥klte Insulated Type

Contextual Info: S I E 3 1 A 2 ( i * = $ B n p ) : Outline Drawings GENERAL-USE RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • Sfl5tJEt H ig h v o lta g e c a p a b ility iflB fJ ifë liE • E xce lle n t a va ra n ch e c h a ra c te ris tic s S tu d m o u n te d

ERG51

Abstract: SIG01
Contextual Info: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility

sft 322 transistor

Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
Contextual Info: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type

Contextual Info: E R 6 2 - 0 0 4 io a C SCHOTTKY BARRIER DIODE * Features • &vF Low VF Super high speed switching. • 7 i Connection Diagram High reliability by planer design, : Applications High speed power switching. : M axim um Ratings and Characteristics : Absolute Maximum Ratings

h0263

Abstract: ESAB85-009 P151 T460 T930
Contextual Info: ESAB85-009I5A SCHOTTKY BARRIER DIODE •4tH!: : Features '1&VF Low V f S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design *. A pplications H igh speed pow er sw itch in g . M axim um Ratings and C haracteristics • « * * * * £ * : A bsolute M axim um Ratings

LC240A

Abstract: 30S3 M104 T151 t460 transistor
Contextual Info: 1DI24OA-O55 240a : Outline Drawings POW ER TRA N SISTO R MODULE •¡NfS : Features • iS5iifJ± High Voltage • 7 U— V tJ* — KF*3j& Including Free Wheeling Diode • ASO if],av,' Excellent Safe Operating Area - » « . Insulated Type • 3* _ 0?5 ,

ERG75

Abstract: T151 T760 T810 A23G
Contextual Info: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings

pj969

Abstract: PJ 96
Contextual Info: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • High Arm Short Circuit Capability • hFEA^&i,' High DC Current Gain •7' J ' J FfajBL Including Freewheeling Diode • Ifei¥klte Insulated Type

Contextual Info: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35

UTI03

Abstract: P151 T460 YG805C04 IlI15
Contextual Info: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications

diode bas32

Contextual Info: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.

A6 sot23

Contextual Info: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com

30S3

Abstract: 3R3TI20E-080 R611 T930 OE R611
Contextual Info: 3R3TI20E-080 K *1 M •%— i ' > i - ■ : Outline Drawings DIODE and TYRISTOR MODULE : Features -7 X /< > " ■ < “ '> 3 • • ASSUrt'“# ! * • -y ^ G lass P assivatio n C h ip Easy C o n n e c tio n In s u la te d T y p e • d i/d t liM * '^ £