FQU3P20 Search Results
FQU3P20 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQU3P20 | Fairchild Semiconductor | 200 V P-Channel MOSFET | Original | 559.68KB | 9 | ||
| FQU3P20TU | Fairchild Semiconductor | 200V P-Channel QFET | Original | 559.66KB | 9 |
FQU3P20 Price and Stock
FAIRCHILD FQU3P20TUFQU3P20TU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU3P20TU | 5,040 | 235 |
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Buy Now | ||||||
| FQU3P20TU | 5,040 | 235 |
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Buy Now | |||||||
| FQU3P20TU | 3,304 | 235 |
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Fairchild Semiconductor Corporation FQU3P20TUMOSFET P-Channel 200V 2.4A (Tc) IPAK Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU3P20TU | 13,384 | 1 |
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FQU3P20 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqd3p20fqu3p20-200vfqu3p20tu+1 | |
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Contextual Info: QFET P-CHANNEL FQD3P20, FQU3P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. |
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fqd3p20fqu3p20-200v | |
FQD3P20
Abstract: FQU3P20
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fqd3p20fqu3p20-200v | |
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Contextual Info: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqd3p20fqu3p20-200vfqd3p20tf+2 | |
FQD7P20Contextual Info: QFET P-CHANNEL FQD7P20, FQU7P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 19nC Typ. |
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fqd7p20fqu7p20-200vfqd3p20+1 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
IRFU210A
Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
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o-251fdu3706fdu6512aisl9n308ad3+11 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
fairchild mosfet selection guide
Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
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power247tmfairchild mosfet selection guidefqp27p06fqa6n80+7 | |
thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 |