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    FQI16N25C Search Results

    FQI16N25C Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQI16N25C
    		Fairchild Semiconductor Original PDF 887.52KB 9
    FQI16N25CTU
    		Fairchild Semiconductor 250V N-Channel MOSFET Original PDF 776.13KB 9
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    FQI16N25C Price and Stock

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    Rochester Electronics LLC FQI16N25CTU

    MOSFET N-CH 250V 15.6A I2PAK
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    DigiKey FQI16N25CTU Tube 342
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    onsemi FQI16N25CTU

    FQI16N25CTU
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    Verical FQI16N25CTU 3,589 355
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    Fairchild Semiconductor Corporation FQI16N25CTU

    Power Field-Effect Transistor, 15.6A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FQI16N25CTU 3,589 1
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    FQI16N25C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQB16N25C

    Abstract: FQI16N25C
    Contextual Info: FQB16N25C/FQI16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB16N25C/FQI16N25C 10ner FQB16N25C FQI16N25C PDF

    FQB16N25C

    Abstract: FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet
    Contextual Info: QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description • 15.6A, 250V, RDS on = 0.27 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB16N25C/FQI16N25C FQB16N25C/FQI16N25C FQB16N25C FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet PDF