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    FQB16N25CTM Search Results

    FQB16N25CTM Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQB16N25CTM
    		Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series Original PDF 887.53KB 9
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    FQB16N25CTM Price and Stock

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    Rochester Electronics LLC FQB16N25CTM

    MOSFET N-CH 250V 15.6A D2PAK
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    DigiKey FQB16N25CTM Bulk 304
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    onsemi FQB16N25CTM

    FQB16N25CTM
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    Verical FQB16N25CTM 845 316
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    Fairchild Semiconductor Corporation FQB16N25CTM

    Power Field-Effect Transistor, 15.6A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FQB16N25CTM 845 1
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    FQB16N25CTM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQB16N25C

    Abstract: FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet
    Contextual Info: QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description • 15.6A, 250V, RDS on = 0.27 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB16N25C/FQI16N25C FQB16N25C/FQI16N25C FQB16N25C FQB16N25CTM FQI16N25C FQI16N25CTU n-channel 250V power mosfet PDF