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    FQD13N10 Search Results

    FQD13N10 Datasheets (10)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQD13N10
    Fairchild Semiconductor 100V N-Channel MOSFET Original PDF 632.82KB 9
    FQD13N10L
    Fairchild Semiconductor 100 V Logic N-Channel MOSFET Original PDF 560.3KB 9
    FQD13N10LTF
    Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF 560.31KB 9
    FQD13N10LTM
    Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF 560.31KB 9
    FQD13N10LTM
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF 2
    FQD13N10LTM_NBEL001
    Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF 631.81KB 9
    FQD13N10TF
    Fairchild Semiconductor 100V N-Channel QFET Original PDF 632.83KB 9
    FQD13N10TF
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF 8
    FQD13N10TM
    Fairchild Semiconductor 100V N-Channel QFET Original PDF 632.83KB 9
    FQD13N10TM
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK Original PDF 8
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    FQD13N10 Price and Stock

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    onsemi FQD13N10LTM

    Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
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    TME FQD13N10LTM 743 1
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    Verical () FQD13N10LTM 100,000 2,500
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    FQD13N10LTM 5,000 957
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    FQD13N10LTM 4,025 21
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    FQD13N10LTM 2,500 2,500
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    FQD13N10LTM 2,500 957
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    FQD13N10LTM 2,000 1,000
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    FQD13N10LTM 1,855 6
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    Avnet Americas FQD13N10LTM Tape & Reel 65,000 14 Weeks 2,500
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    Mouser Electronics FQD13N10LTM 225,271
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    Arrow Electronics () FQD13N10LTM Cut Strips 4,025 14 Weeks 1
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    FQD13N10LTM 2,500 14 Weeks 2,500
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    FQD13N10LTM Cut Strips 1,855 1
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    Newark () FQD13N10LTM Cut Tape 2,254 1
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    FQD13N10LTM Tape & Reel 2,254 100
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    FQD13N10LTM Tape & Reel 2,500
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    FQD13N10LTM Tape & Reel 2,500
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    Onlinecomponents.com FQD13N10LTM 2,320
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    Rochester Electronics FQD13N10LTM 8,717 1
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    Avnet Asia FQD13N10LTM 14 Weeks 5,000
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    Avnet Silica FQD13N10LTM 5,000 11 Weeks 2,500
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    EBV Elektronik FQD13N10LTM 12 Weeks 2,500
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    Maritex FQD13N10LTM 5,829 1
    • 1 $0.55
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    Master Electronics FQD13N10LTM 2,320
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    onsemi FQD13N10TM

    Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
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    TME FQD13N10TM 2,500
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    Verical () FQD13N10TM 10,000 2,500
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    FQD13N10TM 2,500 2,500
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    Avnet Americas () FQD13N10TM Tape & Reel 2,500
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    FQD13N10TM Tape & Reel 14 Weeks 2,500
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    Mouser Electronics FQD13N10TM 4,535
    • 1 $1.48
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    Arrow Electronics () FQD13N10TM 10,000 14 Weeks 2,500
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    FQD13N10TM 2,500 14 Weeks 2,500
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    Onlinecomponents.com FQD13N10TM
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    Bristol Electronics FQD13N10TM 3,561
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    ComSIT USA FQD13N10TM 1,450
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    Avnet Asia FQD13N10TM 14 Weeks 2,500
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    Avnet Silica FQD13N10TM 14 Weeks 2,500
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    EBV Elektronik FQD13N10TM 15 Weeks 2,500
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    Flip Electronics FQD13N10TM 198
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    Fairchild Semiconductor Corporation FQD13N10LTM

    Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics () FQD13N10LTM 421
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    FQD13N10LTM 6 1
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    Quest Components () FQD13N10LTM 336
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    FQD13N10LTM 4
    • 1 $0.90
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    Win Source Electronics FQD13N10LTM 67,849
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    VBsemi Electronics Co Ltd FQD13N10LTM-VB

    MOSFETs; FQD13N10LTM-VB; VBSEMI
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    Maritex FQD13N10LTM-VB 10 5
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    Win Source Electronics FQD13N10LTMNL 13,780
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    FQD13N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQD13N10 / FQU13N10 May 2000 QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    fqd13n10fqu13n10 PDF

    Contextual Info: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    fqd13n10fqu13n10fqd13n10tffqd13n10tm+1o-252 PDF

    Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A


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    fqd13n10lfqu13n10l PDF

    FQD13N10

    Abstract: FQU13N10
    Contextual Info: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    fqd13n10fqu13n10 PDF

    Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    fqd13n10lfqu13n10l PDF

    FQU13N10L

    Abstract: FQD13N10L
    Contextual Info: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original
    fqd13n10lfqu13n10l PDF

    FQD13N10

    Abstract: FQU13N10
    Contextual Info: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    fqd13n10fqu13n10 PDF

    Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original
    fqd13n10lfqu13n10lfqu13n10ltuo-251 PDF

    Contextual Info: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    fqd13n10fqu13n10fqu13n10tuo-251 PDF

    Contextual Info: FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    fqd13n10 PDF

    Contextual Info: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original
    fqd13n10lfqu13n10l PDF

    Contextual Info: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    fqd13n10fqu13n10 PDF

    Contextual Info: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    fqd13n10lfqu13n10l PDF

    fqd13n10l

    Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    fqd13n10lfqu13n10l PDF

    Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    fqd13n10lfqu13n10l PDF

    FQD13N10L

    Abstract: FQU13N10L
    Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original
    fqd13n10lfqu13n10l PDF

    Contextual Info: FQD13N10L / FQU13N10L May 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    fqd13n10lfqu13n10l PDF

    Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original
    fqd13n10lfqu13n10lfqd13n10ltffqd13n10ltm+1o-252 PDF

    Contextual Info: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    fqd13n10fqu13n10 PDF

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


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    o-252fdd3706fdd6512afdd6530a+13rfd20n03smfdd6676isl9n306ad3stfdd6672afdd66ss*2n60bfdd5614pfqd7p20sfr9224fqd14n15irfr420ama8630mosfet to-252 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6diode 1n4001 50v 1.0a do-41 rectifier diodek*d1691make smps inverter welding machinetransistor ksp441n5402 spice modeltip122 tip127 mosfet audio amp PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    sc70-6sc75-6supersottm-3/sot-23power247tm+10flmp supersot-6complementary mosfets buz11fqd7p20fdg6316irf650fqp65n06irfs630fdg329nfdp2532fqpf6n80 PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    power247tm500w transistor audio amplifierin5822 diodeirfs6408+7220v ac to 9v dc converter circuitdc 48v ac 220v 500w smpsp-channel mosfet 800vsb550 transistordrive motor 10a with transistor p channel mosfetp channel 600v 20a igbtlist of n channel power mosfet PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    uf4003uf4004uf4005uf4006+16uf4007usb10husb1t1102usb1t11avka75420mw005gfqpf*7n65c applicationsbc548 spice modelbf494 spice modelspice model bf199lm3171bc517 spice modelbc547 spice modelbf494 spicemoc3043-m spice modelspice model bc237 PDF