FQD13N10 Search Results
FQD13N10 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQD13N10 | Fairchild Semiconductor | 100V N-Channel MOSFET | Original | 632.82KB | 9 | ||
| FQD13N10L | Fairchild Semiconductor | 100 V Logic N-Channel MOSFET | Original | 560.3KB | 9 | ||
| FQD13N10LTF | Fairchild Semiconductor | 100V N-Channel Logic Level QFET | Original | 560.31KB | 9 | ||
| FQD13N10LTM | Fairchild Semiconductor | 100V N-Channel Logic Level QFET | Original | 560.31KB | 9 | ||
| FQD13N10LTM | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK | Original | 2 | |||
| FQD13N10LTM_NBEL001 | Fairchild Semiconductor | 100V N-Channel Logic Level QFET | Original | 631.81KB | 9 | ||
| FQD13N10TF | Fairchild Semiconductor | 100V N-Channel QFET | Original | 632.83KB | 9 | ||
| FQD13N10TF | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK | Original | 8 | |||
| FQD13N10TM | Fairchild Semiconductor | 100V N-Channel QFET | Original | 632.83KB | 9 | ||
| FQD13N10TM | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 10A DPAK | Original | 8 |
FQD13N10 Price and Stock
onsemi FQD13N10LTMTransistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD13N10LTM | 743 | 1 |
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FQD13N10LTM | 100,000 | 2,500 |
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| FQD13N10LTM | 5,000 | 957 |
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| FQD13N10LTM | 4,025 | 21 |
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| FQD13N10LTM | 2,500 | 2,500 |
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| FQD13N10LTM | 2,500 | 957 |
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| FQD13N10LTM | 2,000 | 1,000 |
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| FQD13N10LTM | 1,855 | 6 |
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FQD13N10LTM | Tape & Reel | 65,000 | 14 Weeks | 2,500 |
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FQD13N10LTM | 225,271 |
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FQD13N10LTM | Cut Strips | 4,025 | 14 Weeks | 1 |
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| FQD13N10LTM | 2,500 | 14 Weeks | 2,500 |
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| FQD13N10LTM | Cut Strips | 1,855 | 1 |
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FQD13N10LTM | Cut Tape | 2,254 | 1 |
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| FQD13N10LTM | Tape & Reel | 2,254 | 100 |
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| FQD13N10LTM | Tape & Reel | 2,500 |
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| FQD13N10LTM | Tape & Reel | 2,500 |
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FQD13N10LTM | 2,320 |
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FQD13N10LTM | 8,717 | 1 |
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FQD13N10LTM | 14 Weeks | 5,000 |
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FQD13N10LTM | 5,000 | 11 Weeks | 2,500 |
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FQD13N10LTM | 12 Weeks | 2,500 |
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FQD13N10LTM | 5,829 | 1 |
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FQD13N10LTM | 2,320 |
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onsemi FQD13N10TMTransistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD13N10TM | 2,500 |
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FQD13N10TM | 10,000 | 2,500 |
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| FQD13N10TM | 2,500 | 2,500 |
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FQD13N10TM | Tape & Reel | 2,500 |
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| FQD13N10TM | Tape & Reel | 14 Weeks | 2,500 |
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FQD13N10TM | 4,535 |
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FQD13N10TM | 10,000 | 14 Weeks | 2,500 |
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| FQD13N10TM | 2,500 | 14 Weeks | 2,500 |
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FQD13N10TM |
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FQD13N10TM | 3,561 |
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FQD13N10TM | 1,450 |
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FQD13N10TM | 14 Weeks | 2,500 |
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FQD13N10TM | 14 Weeks | 2,500 |
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FQD13N10TM | 15 Weeks | 2,500 |
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FQD13N10TM | 198 |
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Fairchild Semiconductor Corporation FQD13N10LTMTrans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD13N10LTM | 421 |
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| FQD13N10LTM | 6 | 1 |
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FQD13N10LTM | 336 |
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| FQD13N10LTM | 4 |
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FQD13N10LTM | 67,849 |
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VBsemi Electronics Co Ltd FQD13N10LTM-VBMOSFETs; FQD13N10LTM-VB; VBSEMI |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD13N10LTM-VB | 10 | 5 |
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Fairchild Semiconductor Corporation FQD13N10LTMNL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD13N10LTMNL | 13,780 |
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FQD13N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQD13N10 / FQU13N10 May 2000 QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqd13n10fqu13n10 | |
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Contextual Info: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqd13n10fqu13n10fqd13n10tffqd13n10tm+1 | |
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Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A |
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FQD13N10
Abstract: FQU13N10
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Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQU13N10L
Abstract: FQD13N10L
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FQD13N10
Abstract: FQU13N10
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Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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fqd13n10lfqu13n10lfqu13n10ltuo-251 | |
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Contextual Info: QFET TM FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqd13n10fqu13n10fqu13n10tuo-251 | |
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Contextual Info: FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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Contextual Info: QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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Contextual Info: QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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fqd13n10lContextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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FQD13N10L
Abstract: FQU13N10L
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Contextual Info: FQD13N10L / FQU13N10L May 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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fqd13n10lfqu13n10lfqd13n10ltffqd13n10ltm+1 | |
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Contextual Info: FQD13N10 / FQU13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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SS*2n60b
Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
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o-252fdd3706fdd6512afdd6530a+13 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
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power247tm500w transistor audio amplifierin5822 diodeirfs6408+7 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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