FQU13N10LTU Search Results
FQU13N10LTU Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FQU13N10LTU |
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100V N-Channel Logic Level QFET | Original | 560.31KB | 9 |
FQU13N10LTU Price and Stock
onsemi FQU13N10LTUMOSFET N-CH 100V 10A IPAK |
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FQU13N10LTU | Tube |
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FQU13N10LTU | 5,040 |
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Fairchild Semiconductor Corporation FQU13N10LTU |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU13N10LTU | 25 |
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FQU13N10LTU | 3,430 |
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FQU13N10LTU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A |
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FQD13N10L FQU13N10L | |
Contextual Info: QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
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FQD13N10L FQU13N10L FQU13N10L FQU13N10LTU O-251 | |
Contextual Info: FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A planar stripe and DMOS technology. This advanced |
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FQU13N10L |