FQA7N80C_F109 Search Results
FQA7N80C_F109 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| SNJ54F109FK |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 20-LCCC -55 to 125 |
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| SN74F109N |
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Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 |
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| SNJ54F109W |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CFP -55 to 125 |
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| SNJ54F109J |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CDIP -55 to 125 |
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| SN74F109DR |
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Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 |
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FQA7N80C_F109 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FQA7N80C_F109 |
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800V N-Channel MOSFET | Original | 813.38KB | 8 | ||
| FQA7N80C-F109 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 7A TO-3P | Original | 2.19MB |
FQA7N80C_F109 Price and Stock
Rochester Electronics LLC FQA7N80C-F109POWER MOSFET, N-CHANNEL, QFET, 8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQA7N80C-F109 | Bulk | 11,985 | 156 |
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onsemi FQA7N80C-F109 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQA7N80C-F109 | 291 | 2 |
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FQA7N80C-F109 | 232 |
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FQA7N80C-F109 | 11,985 | 1 |
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FQA7N80C-F109 | 1,800 |
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FQA7N80C_F109 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQA7N80C | |
FQA7N80C_F109
Abstract: F109 FQA7N80C
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FQA7N80C FQA7N80C_F109 F109 | |
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Contextual Info: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar |
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FQA7N80C | |
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Contextual Info: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar |
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FQA7N80C | |
FQA7N80C
Abstract: F109
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FQA7N80C FQA7N80C F109 | |
MC0628R
Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
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ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884 | |
MC0628R
Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
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SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE |