FQA15N70 Search Results

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area

FQA15N70

Abstract: 700v 5A mosfet
Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)

Contextual Info: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

FQA90N08

Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
Contextual Info: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

fairchild mosfet selection guide

Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Contextual Info: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics

fqa38n30

Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
Contextual Info: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

NL2024

Abstract: lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B
Contextual Info: P O W E R F O R P O R TA B L E E L E C T R O N I C S Rechargeable Batteries Keeping Up with Current Demand By Jeff Shepard W IRELESS MOBILITY is one of the major forces driving demand for, and demands on, rechargeable batteries. The latest devices in the mobile world

fqa38n30

Abstract: IRFP460C equivalent FQA11N90C FQA24N50 SFH9240 FJA13009TU FQA13N80 fqa16n50 bjt test plan FJA13009
Contextual Info: Date Created: 3/3/2004 Date Issued: 3/10/2004 PCN # 20040605-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is the first revision of the PCN 20040605 to issue Final PCN. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.