FP100F Search Results

Contextual Info: Spice Model FP100F Electrical Characteristics and Maximum Ratings Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Io (Ir) (Vrwm) 55°C(1) 100°C(2) 25°C FP100F Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery

50-DP

Abstract: FP80-40DN FP100-50DN FP100-50DN2 FP100-50DN3 FP80-40DN2 FP80-40DN3 FP80-40DP FP80-40DP2 FP80-40DP3
Contextual Info: FP80FP80-系列 FP100FP100 -系列 外 观 图 外 型 尺 寸 安 装 方 式 输出 接线 图 NPN 型 号 直 流 型 PNP 常 开 FP80-40DN FP100-50DN 图1 常 闭 FP80-40DN2 FP100-50DN2 图1 常 开 常 闭 FP80-40DN3 FP100-50DN3 图3 常 开 FP80-40DP

Contextual Info: HIGH VOLTAGE RECTIFIER STACKS 150nS RECOVERY FP25F FP50F FP75F FP100F VRWM = 2500-10000V 2.00 MIN. 50.80 = 2.2A RR = 150nS in.(mm) ,690±.020 (17.53±.50) L ± .020 c > .051 ±.003 (1.30±.08) ,380±.020 (9.65±.50) J ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

FP100F

Abstract: FP25F FP50F FP75F
Contextual Info: FP25F FP50F FP75F FP100F 2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 150 ns Recovery Time ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current in oil (Io) (Vrwm) FP25F FP50F FP75F FP100F

Contextual Info: FP100F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.2 @Temp (øC) (Test Condition)55’ V(RRM)(V) Rep.Pk.Rev. Voltage10k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage29 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

HT 1200-4

Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

Contextual Info: HIGH VOLTAGE RECTIFIER STACKS 70ns-150ns Recovery • Axial Leaded ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (in oil) (to) Volts Amps Amps 55°C Reverse Current @ Vrwm Forward Voltage

PT740 AB

Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

PT740 AB

Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Contextual Info: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

X200SG

Abstract: Z100SG 1N6521U
Contextual Info: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000

Mitsubishi Engineering-Plastics Corp

Abstract: IUPILON Sumikon am113 CE-3110 NAN YA PLASTICS 1403g6 lexan 3412 GSN2020R2 lexan 3413 FP100F GSV2020R2
Contextual Info: File E56140 Vol. 1 Sec. 8 and Report Page 1 Issued: Revised: 2-23-82 10-2-92 D E S C R I P T I O N PRODUCT COVERED: Model Series VF, may be followed by B, D, or P, followed by one or two digits 3 through 60, followed by L, M or H, may be followed by 5, may be