FP-32D PACKAGE Search Results

1Z16

Abstract: SOP32 PRSP0032DC-A FP-32D D-3217 PSOP-32
Contextual Info: JEITA Package Code P-SOP32-11.3x20.45-1.27 RENESAS Code PRSP0032DC-A *1 Previous Code FP-32D/FP-32DV MASS[Typ.] 1.3g NOTE 1. DIMENSIONS"*1 Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F D 32 17 bp Index mark Terminal cross section

Hitachi DSAUTAZ006

Abstract: FP32D
Contextual Info: HM62V8512C Series Package Dimensions HM62V8512CLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05

Hitachi DSAUTAZ005

Abstract: ttp 021
Contextual Info: HM62W8512B Series Package Dimensions HM62W8512BLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05

FP-32D

Abstract: FP32D FP-32D hitachi Hitachi DSAUTAZ005
Contextual Info: HM628512BFP Series Package Dimensions HM628512BFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05

Hitachi DSAUTAZ005

Contextual Info: HM62V8512B Series Package Dimensions HM62V8512BLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05

32 PIN

Contextual Info: HN58V1001 Series Ordering Information Type No. Access time Package HN58V1001P-25 250 ns 600 mil 32-pin plastic DIP DP-32 HN58V1001FP-25 250 ns 525 mil 32-pin plastic SOP (FP-32D) HN58V1001T-25 250 ns 8 x 14 mm 32-pin plastic TSOP (TFP-32DA) Pin Arrangement

2 mil res

Abstract: 32 PIN
Contextual Info: HN58C1001 Series Ordering Information Type No. Access time Package HN58C1001P-15 150 ns 600 mil 32-pin plastic DIP DP-32 HN58C1001FP-15 150 ns 525 mil 32-pin plastic SOP (FP-32D) HN58C1001T-15 150 ns 8 x 14 mm 32-pin plastic TSOP (TFP-32DA) Pin Arrangement

Contextual Info: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION

LR4802

Abstract: LR4087 alarm SL DIALER LR3441 Diode SY 356 lh5045 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003
Contextual Info: Product Lineup Product Lineup • Gate Arrays/Standard Cells 1 Gate Arrays P ro cess S eries LZ93 LZ95 CMOS F eatu re G ates High speed D esign rule Delay time Supply voltage O utput current V(TYP.) mA(MAX.) Page 300-5000 1.6 ,«m ns/gate * 1.7 5 4 41 300-10000

transistor smd code marking 404

Abstract: transistor smd code 404
Contextual Info: BSS 119 In fin e o n technologies SIPMOS Small-Signal Transistor h • N channel i /V • Enhancement mode • ^ G S (th 2 = 1-6 .2.6 V 1 Pin 2 Pin 1 VqS BSS 119 100 V Type BSS 119 Ordering Code Q67000-S007 0.17 A Pin 3 D S G Type VPS05557 RDS(on) Package

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

Contextual Info: HM628128B Series 131,072-word x 8-bit High speed CMOS Static RAM HITACHI ADE-203-243C Z Rev. 3.0 Aug. 10, 1996 Description The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process

58C1001

Contextual Info: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

IR3N06

Abstract: IR3N37 lr4087 IR3N05 IR3N71 LR4087B IR3N32 116dx LR48106
Contextual Info: SPÉCIAL FUNCTIONICs ★ Under development Tone Dialers LR4087B/BN Complementary Single contact Bipolar NPN LR4089B/BN Matrix 0.5 1.0 2.5 to 6 1.0 N-ch. open drain 3.58 MHz Crystal 160IP/18MFP oscillator 16DIP/18MFP • Pulse/Tone Dialers M i l tie. .

hm658512ltt

Contextual Info: NEW PRODUCT HM658512 Series 524288-Word X 3-Bit High Speed Pseudo Static RAM Rev. 5 Sep. S, 1991 H ITA C H I - Pr e l i m i n a r y Features • Single 5 V + 10 Ï • High speed Access time ^CE access time . 80/100/120 ns Cycle time Random read/write cycle time.130/160/190 ns

lh5359

Abstract: e5bx
Contextual Info: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.

L295D

Abstract: 3P92 LZ95G IR3P92 LZ23452 IR3P81 sharp LZ93N LR48106 LZ93N IR3P68
Contextual Info: PRODUCT UNEUP SHARP PRODUCT LINEUP 1 /2 type CCD AREA SENSORs No.of pixels 270 k 320 k TV standard Model No. Color NTSC LZ2113Y B /W EIA LZ2114J Color PAL LZ2123Y B /W CCIR LZ2124J Electronic shutter s 1/6 0 to 1 /1 0 000 1 /5 0 to 1 /1 0 000 Resolution

74AHC

Abstract: 74AHC32 74AHC32D 74AHC32PW 74AHCT32 74AHCT32D 74AHCT32PW
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification Q uad 2-in pu t O R g ate 74A H C 32; 74A H C T 32 FEA TUR ES Q U IC K R E F E R E N C E DATA • O utput capability: standard GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • Ice category: SSI.

Contextual Info: HM628128B Series 1 M SRAM 128-kword x 8-bit HITACHI ADE-203-243E (Z) Rev. 5.0 Nov. 1997 Description The H itachi HM 628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process

DS2311

Contextual Info: JUN li 1993 DS5311FP P R E L IM IN A R Y PALLAS DS5311FP 68HC11 Softener Chip s e m ic o n d u c to r FEATURES • Softens 68HC11 -based systems - Converts up to 64K bytes of CMOS RAM into lithium-backed NV program/data storage - Serial bootstrap loading - In-system program changes adapt HC11 to task

Contextual Info: HM62W8128B-SR Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-598 Z Preliminary Rev. 0.0 Aug. 10, 1996 D escription The Hitachi HM62W 8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ^m Hi-CMOS shrink process

628128

Contextual Info: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series

Contextual Info: HM62W8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-656A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi HM62W8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.8 J i m Hi-CMOS shrink process

hn58v1001

Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS