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4166

Contextual Info: TRANSISTOR OPTOCOUPLERS ISOCOM LTD H11AA1 Schematic Diagram 6 5 4 1 2 3 DESCRIPTION The H11AA1 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a silicon phototransistor mounted in a standard 6-pin dual-in line package, with surface mount, butt cut and gull

STB70NFS03L

Contextual Info: STB70NFS03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS on ID 30 V < 0.01 Ω 70 A IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

tvs3v3l4u

Abstract: TVS3V3
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes TVS3V3L4U Low Capacitance ESD / Transient / Surge Protection Array TVS3V3L4U Data Sheet Revision 2.2, 2012-05-09 Final Power Management & Multimarket Edition 2012-05-09 Published by Infineon Technologies AG 81726 Munich, Germany

ETX 100 RLC JDS Uniphase Corporation

Abstract: JDSU ETX 75 JDS ETX 75 LC InGaAs Receptacle LC JDSU ETX JDSU ETX 100 dual photodiode photodetector modules pin Photodiode 1550 nm
Contextual Info: COMMUNICATIONS COMPONENTS High Speed InGaAs Photodetector Receptacle Modules ETX 100 Key Features • Electro-optical - High responsivity at 1310 and 1550 nm - Bandwidth greater than 1 GHz - High sensitivity • Packaging - Small surface area, LC receptacle for PC boards

Contextual Info: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W •     Figure 1: Internal schematic diagram

MAAPSS0004

Abstract: MAAPSS0005 VHHC
Contextual Info: MAAPSS0004 Preliminary 3V GSM/GPRS RF Power Amplifier 880 - 915 MHz Functional Block Diagram Features • • • • • High gain, 3-stage amplifier 50 ohm input and output Low external part count 3 volt supply Miniature FQFP-N 5-mm plastic package Description

SCHOTKY

Abstract: 6RI30E 100X2 2RI100E 2RI60E 6RI100E 6RI100G 6RI30G 6RI50E 6RI75E
Contextual Info: Diode Modules Ratings and Characteristics Type Schematic Diagram — 3 Phase Diode Bridge Rectifier Diode Module 6 Chips in Bridge Insulated Type Part Number o O- Rated Current Surge Current Junction Temp. Insulation Voltage Forward Voltage V (A) (A)

lm336 pin diagram

Abstract: LM236-LM336 BAP 16 voltage regulator KVT 20 Temperature LM336B ST make JESD97 LM236 LM336 LM336B LM336D 5.0
Contextual Info: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02L

Contextual Info: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF03LA

Abstract: tl 071
Contextual Info: STV160NF03LA N-CHANNEL 30V - 0.0021Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.003 Ω 160 A TYPICAL RDS(on) = 0.0021 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

aurix

Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by

NTE632

Contextual Info: NTE632 Silicon Rectifier Diode Dual Switching Series Pair Surface Mount Features: D Small Ceramic SMD Package D High Switching Speed D High Conductance D SOT−23 Molded Plastic Case Applications: D General Purpose Switching Applications Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)

schematic diagram lightning protection

Abstract: etc-1-13 VDSL2 ETC1-13
Contextual Info: TVS Diode Arrays SPA Family of Products Lightning Surge Protection - SP03-3.3 Series SP03-3.3 Series 3.3V 150A Rail Clamp Array RoHS Pb GREEN This new broadband protection device from Littelfuse provides overvoltage protection for applications such as 10/100/1000 BaseT Ethernet, T3/E3 DS3 interfaces,

TO253

Abstract: LCDA15
Contextual Info: LCDA15-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDA15-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD and lightning. Each device will protect one line in

RF15N

Abstract: RF1-5
Contextual Info: C&K RF 15 & 15 N Series Tactile Switches & Signal Indicators Features/Benefits S S S S Long life—1,000,000 cycles Highly reliable contact design Illumination available Positive tactile feedback Typical Applications S S S Medical equipment Test instrumentation equipment

smoke detector schematic diagrams

Abstract: AQW610EHAZ Transistors Diodes smd e2 diagram 3 phase heater schematic diagram heater ultrasonic Phase Frequency detector AQW610EHAX AQW610S AQY410EH AQY410S
Contextual Info: AQW610EH PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type 9.86 .388 FEATURES 6.4 .252 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast

NCP1400ASN33T1

Abstract: NCP1400A CD54-220MC A114 JESD22 NCP1400ASN19T1 NCP1400ASN25T1 NCP1400ASN27T1 NCP1400ASN30T1 NCP1400ASN50T1
Contextual Info: NCP1400A 100 mA, Fixed Frequency PWM Step-Up Micropower Switching Regulator Features http://onsemi.com 5 1 THIN SOT–23–5 SN SUFFIX CASE 483 PIN CONNECTIONS AND MARKING DIAGRAM CE 1 OUT 2 NC 3 • Extremely Low Start–Up Voltage of 0.8 V • Operation Down to Less than 0.2 V

KA336-2.5

Abstract: KA236 Programmable Shunt Regulator "Shunt Regulator" KA336 ka3362 KA336-2.5B shunt regulator negative regulator ic st
Contextual Info: KA336-2.5/B/KA236-2.5 PROGRAMMABLE SHUNT REGULATOR PROGRAMMABLE SHUNT REGULATOR TO-92 The KA336-2.5/B integrated Circuits are precision 2.5V shunt regulators. The monolithic IC voltage references operates as a low temperature coefficient 2.5V zener with 0.2

ultra low forward voltage diode

Abstract: OM4412ST ultra low forward voltage schottky diode ultra low forward voltage "ultra low forward voltage"
Contextual Info: 43E D b?ô c107B 0 0 0 0 7 3 b ô I OMNI OM4412ST 20 AMP ULTRA LOW FORWARD VOLTAGE SCHOTTKY CENTER-TAP RECTIFIERS om nirel c or p 20 Amp, 45 Volt Center-Tap Schottky* r - ü 's - n FEATURES • • • • • • Small Size/JEDEC TO-257AA Package Ultra Low Forward Voltage

ZREF12

Abstract: ZREF12D ZREF12Z
Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZREF12 ISSUE 2 - MARCH 1998 DEVICE DESCRIPTION FEATURES • The ZREF12 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.24 volts. The device is available in a small outline surface mount

ZREF50

Abstract: ZREF50D ZREF50Z
Contextual Info: PRECISION 5.0 VOLT MICROPOWER VOLTAGE REFERENCE ZREF50 ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES • The ZREF50 uses a bandgap circuit design to achieve a precision micropower voltage reference of 5.0 volts. The device is available in a small outline surface mount package,

BS 1580

Abstract: STV160NF03L
Contextual Info: STV160NF03L N-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03L • VDSS RDS on ID 30 V < 0.0028 Ω 160 A TYPICAL RDS(on) = 0.0019 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED