FORWARD REVERSE SCHEMATIC DIAGRAM Search Results

MBR20100CT

Contextual Info: MBR20100CT Pb-Free Product NCE MOS Barrier Rectifier Description This Schottky rectifier has been optimized for low reverse leakage at high temperature, this product special design for high forward and reverse surge capability Schematic diagram General Features

S642-S

Abstract: S742 S6421 S642 5v relay pin
Contextual Info: Issued July 1998 291-9899 Data Pack D 1A SPNO DIL Solid State Relay Data Sheet RS stock number 196-7465 Standard features Schematic diagram ● Inverse parallel SCR output Figure 2 ● High transient immunity ● True zero volt turn-on ● Input to output isolation meets or exceeds VDE

SSF3055

Abstract: DIODE IN 3055 "battery protection" TO252
Contextual Info: SSF3055 D DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic diagram GENERAL FEATURES ● VDS = 25V,ID = 12A

4166

Contextual Info: TRANSISTOR OPTOCOUPLERS ISOCOM LTD H11AA1 Schematic Diagram 6 5 4 1 2 3 DESCRIPTION The H11AA1 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a silicon phototransistor mounted in a standard 6-pin dual-in line package, with surface mount, butt cut and gull

STB70NFS03L

Contextual Info: STB70NFS03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS on ID 30 V < 0.01 Ω 70 A IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION

LFD4662

Abstract: LED COMMON ANODE SCHEMATIC DIAGRAM
Contextual Info: LFD466X-XX/SRP14 FOUR DIGIT LED DISPLAY 0.396 Inch PACKAGE DIMENSION SERIES Page 1/2 INTERNAL CIRCUIT DIAGRAM LFD466X-XX/SRP14 44.0(1.732") 10.05 (0.396") UC DIG.2 DIG.3 7.0(0.276") DIG.4 LC 16.0 (0.63") 12.7(0.5") 1.65±0.5 9.5 (0.374") 14.0±0.5 □0.51

SSF8521

Abstract: DFN3X2-8L
Contextual Info: SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS ON and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram

Contextual Info: KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application Internal schematic diagram C 2 • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time

SOT23-6

Abstract: SSF3416 9A SOT23
Contextual Info: SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V

SSFK3208

Abstract: GEMPAK5060
Contextual Info: SSFK3208 D DESCRIPTION The SSFK3208 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 13mΩ @ VGS=4.5V

SSF3612

Contextual Info: SSF3612 D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V

SOP-8

Abstract: SSF3610
Contextual Info: SSF3610 D DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 13mΩ @ VGS=4.5V

SOP-8

Abstract: SSF3620
Contextual Info: SSF3620 DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =7A RDS(ON) < 30mΩ @ VGS=4.5V

Contextual Info: SSF3615 D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS =- 30V,ID =-10A RDS(ON) < 19mΩ @ VGS=-4.5V

Contextual Info: MASW-000823-12770T HMICTM PIN Diode SP2T 13 Watt Switch for TD-SCDMA Applications M/A-COM Products Rev. V5 Features • • • • • • • • Functional Diagram TOP VIEW Exceptional Tx Loss = 0.35 dB Avg @ 2025 MHz, 20mA Exceptional Rx Loss = 0.50 dB Avg @ 2025 MHz, 20mA

led flashlight

Abstract: flashlight zxsc310 design ideas BAT54 BAT54S BAT750 TS16949 ZXSC310E5 ZXTN25012EFL
Contextual Info: DN78 ZXSC310 with reverse polarity protection Ray Liu - Applications Engineer, Zetex Semiconductors Description The schematic diagram shown in Figure 1 is a typical example of the ZXSC310 used in a LED flashlight application. The input voltage can either be one or two alkaline cells. If the battery is put

A 4714 8 PIN

Abstract: KAQV414 KAQV414A
Contextual Info: DB LECTRO Inc. High Voltage, Photo Mos Relay E D KAQV414/414A UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQV414 1. Normally Close, Single Pole Single Throw 2. Control 400VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA

Contextual Info: ROHM Motor Driver IC Solutions Evaluation Board: H-Bridge Motor Drivers For DC Brush Motors No.0000000012 BD6212FP, BD6222FP, BD6232FP 2A / 5.5V, 15V, 32V ●Introduction This application note will provide the steps necessary to operate and evaluate ROHM’s H-Bridge motor drivers using the BD62x2 evaluation

SOP-8

Abstract: SSF3641 marking 49m Silikron Semiconductor
Contextual Info: SSF3641 DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS =- 30V,ID =-5A RDS(ON) < 64mΩ @ VGS=-4.5V

SSF4953

Abstract: SOP-8 4953 circuit 4953 G2 marking 1324NS
Contextual Info: SSF4953 DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G2 G1 S1 S2 Schematic diagram

Diode CO 820

Abstract: SSF4414
Contextual Info: SSF4414 D DESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 8.5A RDS(ON) < 40mΩ @ VGS=4.5V

SSF9435

Abstract: SOP-8 9435 sop-8 9435 transistor 9435 power 9435 so package marking 9435 9435 9435 datasheet 9435 sop 8
Contextual Info: SSF9435 D DESCRIPTION The SSF9435 uses advanced trench technology to provide excellent RDS ON , low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). G S Schematic diagram

SSFD3005

Contextual Info: SSFD3005 D DESCRIPTION The SSFD3005 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS =- 30V,ID =-10A RDS(ON) < 7.5mΩ @ VGS=-10V

Contextual Info: SSF3626 DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V