Mosfet
Abstract: SSF3051G7
Contextual Info: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load
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ssf3051g73051g745mohmot23-6+43000pcs10pcs30000pcsmosfet
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diode zener 5v1 55c
Abstract: c82 004 BZX79 5v1 c2v0 c4v3 zener BZX55 C82 004 diode c22225 C2V2 ZENER C2V2
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1. DO-35 单 位: mm CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 LESHAN RADIO COMPANY, LTD. 2.1 BZX55/C Series Zener Diodes 1) TYPE Zener Voltage range IZT for VZT2) Vznom mA Dynamic resistance rzjK at IZK
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do-35bzx55/cbzx55/c0v8bzx55/c2v0+15bzx55/c2v2bzx55/c2v485ion10pcs/each5000pcs/eachdiode zener 5v1 55cc82 004bzx79 5v1c2v0c4v3 zenerbzx55c82 004 diodec22225c2v2 zenerc2v2
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MTZJ 188
Abstract: 05w18 MTZJ SERIES ZENER DIODES 52855 05W1 05W2 05W3 05W4 05WS1 05WS2
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/8 LESHAN RADIO COMPANY, LTD. 2. ProductCharacteristic
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do-34do-3505ws205ws3+1110pcs/each5000pcs/eachmtzj 18805w18mtzj series zener diodes5285505w105w205w305w405ws1
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zener db3
Abstract: DIAC-Triac diode zener db3 DB3 ZENER diode diode db3 51 zener japan do-35 DIAC-Triac* 120v diac temperature control circuit diac 40 diac DB-3
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/6 LESHAN RADIO COMPANY, LTD. BI-DIRECTIONAL TRIGGER DIODES
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do-34do-3510pcs/each5000pcs/each+10zener db3diac-triacdiode zener db3db3 zener diodediode db3 51zener japan do-35diac-triac* 120vdiac temperature control circuitdiac 40diac db-3
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1N4733A
Abstract: 1N4744A 1N47 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4734A 1N4735A
Contextual Info: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension DO-41: 单 位: mm CATHODE BAND Φ0.8±0.0 30.17±2 4.3±0.1 30.17± Φ2.41±0.1 1/6 LESHAN RADIO COMPANY, LTD. 2. ProductCharacteristic 1N47 Serises Zener Diodes TYPE 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A
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do-411n4728a1n4729a1n4730a+81n4731a1n4732a1n4733a1n4734a1n4735a1n4736a1n4744a1n47
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Mosfet
Abstract: SSF3036C
Contextual Info: SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS on 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits Advanced Process Technology
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ssf3036c3036c3000pcs10pcs+330000pcs120000pcsmosfet
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Mosfet
Abstract: SSF2145CH6
Contextual Info: SSF2145CH6 20V Complementary MOSFET Main Product Characteristics P-Ch 20V -20V 2145C VDSS N-Ch RDS on (typ.) 38mohm 64mohm ID 4.8A Marking and Pin TSOP-6 2.9A Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology
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ssf2145ch62145c38mohm64mohm+53000pcs10pcs30000pcs120000pcsmosfet
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Mosfet
Contextual Info: SSF3056C 30V Complementary MOSFET Preliminary Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits Advanced trench MOSFET process technology
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ssf3056c37mohm68mohm3056c+53000pcs10pcs30000pcs120000pcsmosfet
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Mosfet
Abstract: SSF2160G4 marking s25
Contextual Info: SSF2160G4 20V N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 28mohm(typ.) ID 4.5A 2160G4 S25 Marking and Pin SOT23-3 Assignment Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load
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ssf2160g428mohm2160g4ot23-3+63000pcs10pcs30000pcs120000pcsmosfetmarking s25
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