FORT0220 Search Results

BUK455

Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK456-50A

Abstract: BUK456 N25Y 15 1E41 BUK456-50B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • k b S 3 c131 002ÜSE0 5 ■ BUK456-50A BUK456-50B PowerMOS transistor T - 3 T - 13 GENERAL DESCRIPTION N-channel enhancement mode field-etfect power transistor in a plastic envelope. The device is intended for use in

BUK555-50A

Abstract: BUK555-50B T0220AB 418 NDS
Contextual Info: N AMER PHILIPS/DISCRETE SSE J> bfciS3ci31 0 D 2 0 t 3 S m G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 7^237 G D M b l T H 341 • SGTH STP3N90 STP3N90FI SGS-THOMSON iL[lCT[^CQ ROÖOS * 7# N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP3N90 STP3N 90FI dss 900 V 900 V RDS on) Id < 4 .5 Q < 4 .5 Q 3 .2 A 1.9 A ■ TYPICAL RDS(on) = 3.9 Q . ■ ■

IGBTs Transistors

Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Mechanical data; SOT93 MECHANICAL DATA Dimensions in mm -15.2 max - Net Mass: 5 g — 14 — 4.6 max • 13.64.25 4.15 4.4 “ f 21 max 12.7 max 2.2 max | 3 n T □s r " dimensions within