FORMOSA MICROSEMI Search Results

FMBT3904

Abstract: Formosa MS
Contextual Info: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : Page No. : 1/3 Formosa MS FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications. Absolute Maximum Ratings

Microsemi Taiwan

Contextual Info: FORMOSA MICROSEMI CO., LTD. Formosa MS Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : 2003/1/10 Page No. : 1/3 FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications.

FMBT3906

Contextual Info: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2002/12/25 Page No. : 1/3 Formosa MS FMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The FMBT3906 is designed for general purpose switching and amplifier applications.

Formosa MS

Abstract: Microsemi Taiwan
Contextual Info: Formosa MS FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2003/1/7 Page No. : 1/3 FMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The FMBT3906 is designed for general purpose switching and amplifier applications.

DIODE WITH SOD CASE

Contextual Info: MM914 FORMOSA MICROSEMI High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed t rr= 4 ns Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Test Conditions

zener diode BZ 320

Abstract: zener diode BZ 55 zener diode BZ 250 zener diode BZ 110 zener diode BZ 168 BZ 140 zener zener diode BZ 5.5 DIODE BZ marking HX zener diode BZ 100 AND 0.3 WATTS
Contextual Info: Formosa MS ZM200X THRU ZM330Y 1WATT SURFACE MOUNT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY .161 4.1 .146(3.7 ) .071(1.8 ) .055(1.4 ) MECHANICAL DATA

diode zener 3v9

Contextual Info: FormosaMS ZMM55C Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Power dissipation Z-current Junction temperature

Formosa MicroSemi

Abstract: ZMM55A ZMM55B ZMM55C ZMM55F zener 6v2
Contextual Info: FormosaMS ZMM55C Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25 oC Parameter Power dissipation Z-current Junction temperature

1N60 diode

Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
Contextual Info: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

Contextual Info: DIO 4439 Why Diodes SASP1 final _- 09/10/2014 01:41 Page 1 WHY DIODES – SASP1 Why DIODES? Diode and Rectifier Devices A Broad Range of Diode and Rectifier Devices Offering Solutions Such as the Following: Broad Range of Through-Hole, Surface-Mount and Leadless Packages Including the Following:

POWER TRANSFORMER E154515

Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD