FOR TRANSISTOR Search Results
FOR TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GCM32ED70J476KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive | |||
GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
FOR TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
sp8m3
Abstract: RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k
|
Original |
DTDG14GP DTDG23YP 2SD2143 QSH29 DTDG23YP DTDG14GP 2SD2143 QSH29 2SB1260 sp8m3 RSQ035P03 10W zener diode zener diode 20w SP8J1 automotive ecu ROHM PTZ Series rss065n06 2k 9e dual 2sc2412k | |
STA471A
Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent
|
Original |
2SA1725/2SC4511 15max. STA471A pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent | |
transistor
Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor
|
Original |
||
Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power |
Original |
NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 | |
NPTB00050BContextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power |
Original |
NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B | |
Contextual Info: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz |
Original |
BFP410 AEC-Q101 OT343 | |
Dupline
Abstract: ELEVATOR CONTROL pcb dupline 128 power line carrier communication dc G21305511 carlo gavazzi module Carlo Gavazzi CHANNEL GENERATOR ELEVATOR dc-power-supply dc power carrier communication
|
Original |
||
TIM202Contextual Info: TIM 10, 20, 40 Vishay Aztronic Pulse Transformers for General Use FEATURES • These micro transformers are designed for pulse transmission for frequencies up to 300kHz • They are used for signal synchronization, power supplies and transistor control • Available taped and reeled which allows automatic pick |
Original |
300kHz 200mA 300kHz 1000VRMS 50200mA 100mA 400mA TIM202 | |
Contextual Info: Dupline Field- and Installationbus Output-Module for Elevators Type G 2130 55.1 700 • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline carrier |
Original |
G2196 | |
Contextual Info: NPN Silicon RF Transistor BF 771 • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type M arking O rdering code for versions on 8 mm-tape Package BF 771 R3 Q62702-F990 SOT 23 |
OCR Scan |
Q62702-F990 | |
transistor TO220
Abstract: transistor TO-3P TO3-P M1847 m175 all type transistor to3p
|
Original |
P2187 M1922 M1761 M1744 M1847 M1728 M1748 M1927 transistor TO220 transistor TO-3P TO3-P m175 all type transistor to3p | |
depletion 400V power mosfet
Abstract: P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet
|
Original |
AN-D27 depletion 400V power mosfet P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet | |
vibrator detector
Abstract: 251C VQFP48
|
OCR Scan |
BD6021 22S-6452 ei62-715 vibrator detector 251C VQFP48 | |
SAW MARKING CODE SOT-23Contextual Info: NPN Silicon RF Transistor • • BF 799 Suitable for broadband RF amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape |
OCR Scan |
Q62702-F788 Q62702-F935 SAW MARKING CODE SOT-23 | |
|
|||
Contextual Info: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed |
Original |
110VAC O-126 4128L QW-R204-020 | |
Contextual Info: TB6559FG TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6559FG Full-Bridge Driver IC for DC motor TB6559FG is a full-bridge driver IC for DC motor which uses LDMOS for output transistors. It adopts MOS processes for upper Pch and lower Nch transistors, and introduces a constant-current or direct |
Original |
TB6559FG TB6559FG TB6559F | |
TB9100FNG
Abstract: DC brushed motor OSC4MHz DSA0076677 TB9100 air-condition
|
Original |
TB9100FNG TB9100FNG SSOP24-P-300-0 25deg 16Bit DC brushed motor OSC4MHz DSA0076677 TB9100 air-condition | |
bfp410
Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
|
Original |
BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB | |
Contextual Info: UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed |
Original |
110VAC O-126 4128L QW-R204-020 | |
transistor marking 2A H
Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
|
OCR Scan |
2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108 | |
Contextual Info: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment |
Original |
BD159G BD159/D | |
BD159
Abstract: BD159G
|
Original |
BD159 BD159/D BD159 BD159G | |
Contextual Info: BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features • Suitable for Transformerless, Line−Operated Equipment |
Original |
BD159 BD159/D | |
SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
|
Original |
2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 |