FOR TRANSISTOR Search Results

STA471A

Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent
Contextual Info: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors

transistor

Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor
Contextual Info: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

Dupline

Abstract: ELEVATOR CONTROL pcb dupline 128 power line carrier communication dc G21305511 carlo gavazzi module Carlo Gavazzi CHANNEL GENERATOR ELEVATOR dc-power-supply dc power carrier communication
Contextual Info: Du line Output-Module for Elevators Type G 2130 55.1 700 Fieldbus Installationbus • 8 NPN- or PNP-transistor outputs for control of floor-indicators • Open printed circuit board • Bracket for DIN-rail mounting available • LED-indications for supply and Dupline® carrier

TIM202

Contextual Info: TIM 10, 20, 40 Vishay Aztronic Pulse Transformers for General Use FEATURES • These micro transformers are designed for pulse transmission for frequencies up to 300kHz • They are used for signal synchronization, power supplies and transistor control • Available taped and reeled which allows automatic pick

Contextual Info: TB6559FG TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6559FG Full-Bridge Driver IC for DC motor TB6559FG is a full-bridge driver IC for DC motor which uses LDMOS for output transistors. It adopts MOS processes for upper Pch and lower Nch transistors, and introduces a constant-current or direct

TB9100FNG

Abstract: DC brushed motor OSC4MHz DSA0076677 TB9100 air-condition
Contextual Info: TENTATIVE TB9100FNG TB9100FNG 3ch H-Bridge driver for DC Brushed Motor TB9100FNG is a 3chH-bridge driver which is designed specifically for Automotive. 6Hi-side/6Lo-side DMOS transistor are built-in for directly driving small DC Brushed motor. SPI I/F is built-in for motor operation by external MCU.

bfp410

Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package

Contextual Info: BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC4814

Abstract: 2Sc4814 equivalent
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for

Contextual Info: BD159 Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment

BFR193T

Abstract: BFR193TW
Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

d1 marking code dpak transistor

Abstract: d marking code dpak transistor data base dpak data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CRLG MJD41CT4 MJD42C
Contextual Info: MJD41C NPN MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

369D

Abstract: mje3055 transistor MJE3055 MJD2955 MJD2955G MJD2955T4 MJD3055 MJE2955 MJD3055G
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

MJD2955T4

Abstract: d marking code dpak transistor MJE2955 datasheet mje3055 MJD3055 MJE2955 369D MJD2955 MJD2955G MJE2955 power amplifier circuit
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

369D

Abstract: MJD2955 MJD2955G MJD2955T4G MJD3055 MJD3055G MJE2955 MJE3055
Contextual Info: MJD2955 PNP MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

jfet transistor

Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
Contextual Info: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for

Transistor 8fc

Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations

BSY59

Abstract: TRANSISTOR W 59
Contextual Info: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.

Contextual Info: PreliminaryData Sheet NE5820M53 R09DS0005EJ0200 Rev.2.00 May 20, 2011 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.