FO125 Search Results

MX0912B250Y

Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4

Contextual Info: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N

HLX quartz

Abstract: OSRAM hlx 64623 OSRAM hlx 64621 OSRAM 64610 xenophot xenophot OSRAM xenophot hlx 64623 hlx 64621 OSRAM halogen OSRAM 64610
Contextual Info: Product Information Bulletin Microscope LV Lamps Low Voltage Tungsten Halogen Lamps Microscope Microscope LV Lamps (NAED 54050, 54025, 54019, 53999, 54023, 54138, 54034, 54028,54032, 54052, 54036) Low Voltage Tungsten Halogen Lamps (Microscope) • • •

Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

47PF

Abstract: RX3034B70W Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPM EN T D A T A ObE D • t.faS3T31 GQISHDI fl ■ . ~ “ RX3034B70W T his data sheet contains advance Inform ation and specifications are subject to change w ith out notice. T - 3 3 - / j T PULSED M ICRO W AVE POW ER TR A N SISTO R S

Contextual Info: Af1ER P H IL IP s T dT s CRETE DbTT DEVELOPMENT DA I A • t.tS 3131 O D lsn s fe> ■ This data sheet contains advance information and specifications are subject to change without notice. _ y RX2731B90W T - 3 3 - ’ iS ' PULSED M ICRO W AVE POWER TRANSISTOR

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50

1B200Y

Abstract: MRB11040W
Contextual Info: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power cont. Type No. Package Outline (V) tp @ (us) 40 40 40 40 40 40 40 40 24 40 40 24 50 45 50 50 50 50 50 50 50 50 50 50 50 50 50 vcc f (GHz) Duty Cycle Pl TTC (% ) (W) GP (dB) (% ) 100 100 100 100

Contextual Info: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.