FO102 Search Results

PPC5001T

Abstract: PQC5001T
Contextual Info: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.

Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

7Z8G

Abstract: FO-85 transistor qz PPC5001T PQC5001T
Contextual Info: N AMER P H I L I P S / D I S C R E T E OL.E D • L t . S 3 cI B l OQISCHS 5 PPC5001T PQC5001T T-ZZ-Otr • ' • -* S" ' -i . MICROWAVE POWER TRANSISTORS - N-P-N silicon power transistor for use in a common-collector oscillator circuits in military and professional applications,

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bb53T31 001SCH5 2 PPC5001T PQC5001T T - 3 .3 - 0 ^ MICROWAVE POWER TRANSISTORS N-P-N silicon power transistor for use in a common-collector oscillator circuits in military and professional applications. : ' . . . . The transistors operate in c.w.-conditions and are recommended for applications up to 8 GHz.

smd-transistor DATA BOOK

Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
Contextual Info: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance

FO-102

Abstract: ODU microwave PZB16050U
Contextual Info: 70 RF/Microwave Devices M icrow ave Transistors, Continuous Power Package Outline Pi 111 _ Type No. cont. f (GHz) Gp (dB) (%) 8 8.5 8 7 6.8 7 5.6 6 7 45 45 45 45 35 35 35 35 40 tie CLASS B, HIGH POWER (cont.) PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U

Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .

NE56755

Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

OP222

Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

PQC5001T

Abstract: PPC5001T FO-102
Contextual Info: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.