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    TAIYO YUDEN

    TAIYO YUDEN MSASE042SCG1R7AFND21

    (Alt: MSASE042SCG1R7AFND21)
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    Avnet Americas MSASE042SCG1R7AFND21 6 Weeks 20,000
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    TAIYO YUDEN MSASE042SCG6R3BFND21

    (Alt: MSASE042SCG6R3BFND21)
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    Avnet Americas MSASE042SCG6R3BFND21 6 Weeks 20,000
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    TAIYO YUDEN MSASE042SCG7R5CFND21

    (Alt: MSASE042SCG7R5CFND21)
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    Avnet Americas MSASE042SCG7R5CFND21 6 Weeks 20,000
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    TAIYO YUDEN MSASE042SCH070CFND21

    (Alt: MSASE042SCH070CFND21)
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    Avnet Americas MSASE042SCH070CFND21 6 Weeks 20,000
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    TAIYO YUDEN MSASE042SCH5R9BFND21

    (Alt: MSASE042SCH5R9BFND21)
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    Avnet Americas MSASE042SCH5R9BFND21 6 Weeks 20,000
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    FND21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR ED203

    Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
    Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the


    OCR Scan     		1n2175transistor ed203fnd10man-3a+72n3980la 4301do ic 4532a freegermaniumgermanium drift transistortexas instruments led display tilepitaxial mesa PDF

    lt 0210

    Abstract: UFND210 unitrode stackable rectifier
    Contextual Info: /_ UNITRODE CORP TS 1 7 1 ^3 4 7 ^ 3 001000e] POWER M O S FE T T R A N S IS T O R S H d| io 20Q Volt, 1.5 Ohm N-Channel " * * 35 FEATURES DESCRIPTION • • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		001000et347tti3ufnd210ufnd213+2lt 0210unitrode stackable rectifier PDF

    UFND210

    Abstract: UFND213
    Contextual Info: FND210 FND213 POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rd s m and a high transconductance. FEATURES • For A utom atic Insertion


    OCR Scan     		ufnd210ufnd213 PDF