TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1N2175
TRANSISTOR ED203
FND10
MAN-3A
2N3980
LA 4301
do ic 4532A free
germanium
Germanium drift transistor
texas instruments LED Display TIL
epitaxial mesa
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lt 0210
Abstract: UFND210 unitrode stackable rectifier
Contextual Info: /_ UNITRODE CORP TS 1 7 1 ^3 4 7 ^ 3 001000e] POWER M O S FE T T R A N S IS T O R S H d| io 20Q Volt, 1.5 Ohm N-Channel " * * 35 FEATURES DESCRIPTION • • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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001000e
T347Tti3
UFND210
UFND213
lt 0210
unitrode stackable rectifier
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UFND210
Abstract: UFND213
Contextual Info: FND210 FND213 POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rd s m and a high transconductance. FEATURES • For A utom atic Insertion
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UFND210
UFND213
UFND210
UFND213
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