UFND210
Abstract: UFND213
Contextual Info: UFND210 UFND213 POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rd s m and a high transconductance. FEATURES • For A utom atic Insertion
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lt 0210
Abstract: UFND210 unitrode stackable rectifier
Contextual Info: /_ UNITRODE CORP TS 1 7 1 ^3 4 7 ^ 3 001000e] POWER M O S FE T T R A N S IS T O R S H d| io 20Q Volt, 1.5 Ohm N-Channel " * * 35 FEATURES DESCRIPTION • • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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001000et347tti3ufnd210ufnd213+2lt 0210unitrode stackable rectifier
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450
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