FMP13 Search Results

Contextual Info: FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmp13n60e

Contextual Info: FMP13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmp*13N60E

Abstract: fmp13n60e
Contextual Info: FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

13N60

Abstract: 13N60ES 13N60E TO-220F JEDEC
Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

Contacts

Abstract: DIN ISO 2768-M je 3055 din iso 2768 M FMP002S106 FMP005S203 FMP002S103 FMP010S104 FMP053S106 FMP062P104
Contextual Info: High Power Contacts Hochstromkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Mating force pair of contacts Steckkraft (Kontaktpaar) Unmating force Ziehkraft Temperature range (test category 55/155/21 to

FMV07N90E

Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)

FMX002S102

Abstract: fm8w8 FBM004P154M FK20PL18-02V FM17W2P1 FMP002S103 FM9W4 FMX008P102 FMX012 FMX002P102
Contextual Info: Die Titelseite zeigt einen D-Sub Mixed Layout Steckverbinder in Übersichtsdarstellung: • mit verzinntem Stiftsteckverbindergehäuse und Kontaktnoppen • glasfaserverstärktem Polyesterisolierkörper FM • Polbild 13W3 • 10 rechtwinklige Stiftkontakte P5

FMP002

Abstract: ISO+2768+f
Contextual Info: High Power Contacts Hochstromkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Mating force pair of contacts Steckkraft (Kontaktpaar) Unmating force Ziehkraft Temperature range (test category 55/155/21 to

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION_ _ THIS D R A W I N G 19 BY AMP INCO R PO R ATED . A LL □ 1ST LQC 15 U NP UBLISHED. I R E L E A S E D FOR P U B L I C A T I O N C O P Y R IG H T IN T E R N A T IO N A L

13N60E

Contextual Info: DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor